Effects of anodization duration on the properties of sputtered samarium thin films on silicon substrate

Influence of applied voltage on the physical and electrical properties of anodic Sm 2 O 3 thin films on Si in 0.01 M NaOH solution

“…The attained dielectric constants for all the anodised samples range from 8.11 to 10.30. However, these obtained values are lower as compared with the reported literature values of ∼15 [14,[18][19][20][21][22][23][24][25]. This might be due to the extremely high value of Q eff , STD, D it , and D total , charges are trapped in Si metal, IL and less charge are transmitted to the Al gate, and thus the dielectric values are lower as compared with the literature values.…”

“…Of these oxides, Sm 2 O 3 has been seen as one of the most promising candidates due to its high dielectric constant (∼15), a wide bandgap (4.33 eV), high conduction barrier (>1 eV), high breakdown electric field (5-7 MV/cm), and its good thermal stability when in direct contact with Si [14,[18][19][20][21][22][23][24][25]. Various deposition methods have been studied, such as metallo-organic chemical vapour deposition [26], pulsed laser deposition (PLD) [27], thermal evaporation [28], vacuum evaporation [29], resistive evaporation [30], anodisation [25], direct current (DC), and radio frequency (RF) sputtering [14,20,21,31,32].…”

“…Anodisation has been widely used to grow high‐ κ gate oxide layer [17, 35]. In addition, anodisation process allows optimising surface morphology and properties by controlling anodisation parameters such as anodisation voltage, anodisation duration, electrolyte concentration, electrolyte pH, and electrolyte temperatures [33, 37]. The surface morphology and crystallinity of gate oxide films are strongly depending on the anodisation process variables.…”

“…Recently, the effects of anodisation durations of sputtered Sm/Si system have been investigated and reported [37]. According to this reported work [37], it was found that the optimised anodisation duration was 10 min. However, the obtained dielectric constants were low.…”