Effects of band nonparabolicity on the gain and current density in EuSe-PbSe/sub 0.78/Te/sub 0.22/-EuSe IV-VI semiconductor quantum-well lasers

Khodr, M.; McCann, Patrick J.; Mason, B. A.

doi:10.1109/3.481871

Cited by 16 publications

(6 citation statements)

References 16 publications

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“…͑A11͒ for ͑001͒-oriented PbTe/ CdTe QDs are the same to those in the ͓001͔ confined direction of IV-VI QWs, which were derived from the energy dispersion relations for IV-VI semiconductors using Kane's two-band model. 16 Using the longitudinal and transverse effective masses, m ʈ * and m Ќ * at 300 K, 17 the mobility effective masses of the PbTe QDs are calculated to be m ew * = 0.043m 0 for electrons and m hw * = 0.050m 0 for holes. The electron and hole effective masses of the CdTe matrix material are isotropic and the values are m e * = 0.11m 0 and m h * = 0.35m 0 , respectively.…”

Section: System Descriptions and Anisotropy Calculationsmentioning

confidence: 99%

Optical transitions inPbTe∕CdTequantum dots

et al. 2007

Phys. Rev. B

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Recently, intense room-temperature midinfrared luminescent emission has been observed in high-symmetry PbTe quantum dots ͑QDs͒ embedded in a ͑001͒-oriented CdTe single crystalline matrix ͓W. Heiss et al., Appl. Phys. Lett. 88, 192109 ͑2006͔͒. To interpret the optical transition in these newly realized QDs, we have developed a four-band k ៝ · p ៝ model that takes into account the anisotropic effects of the band structure and finite-confinement potential in the QDs. The high order term o͑k i 4 ͒ in the Hamiltonian is calculated using perturbation approximation methods. The simulation of the spontaneous emission of PbTe/ CdTe QDs shows that two types of quantum structures were formed by the thermal annealing of the PbTe/ CdTe quantum wells, as reported by Heiss et al., and the calculations are in good agreement with the experimental observations of the dot sizes and photoluminescence. The model can be extended to the description of interband optical transitions in other IV-VI QDs, such as PbSe/ PbTe and PbSe/ PbEuTe QDs that usually have a large size ͑with a typical lateral size of 50 nm and height of 20 nm͒ and small quantum confinement potential ͑Ͻ100 meV͒ and are oriented in different directions.

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Section: System Descriptions and Anisotropy Calculationsmentioning

confidence: 99%

Optical transitions inPbTe∕CdTequantum dots

et al. 2007

Phys. Rev. B

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“…Two different effective masses thus exist for potential variation along the ͓111͔ direction, as is the case for MQW layers grown on BaF 2 ͑111͒, one for the three oblique ͑o͒ valleys m 111 oblique ϭ9m l m t /(8m l ϩm t ) and one for the single longitudinal ͑l͒ valley m 111 longitudinal ϭm l , where m l and m t are the longitudinal and transverse effective masses, respectively, associated with the prolate ellipsoids of revolution that define the constant energy surfaces for electrons and holes in IV-VI materials. 10 Thus for PbSe QWs grown on a ͑111͒-oriented substrate, the quantum size effect will remove L-valley degeneracy placing the longitudinal valley ͑normal to the substrate surface͒ at a lower energy than the three degenerate oblique valleys. However, this theoretical prediction has not been clearly observed by optical spectroscopes 7-9 because of the superposition of strong interference fringes on the subband transitions.…”

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confidence: 99%

Unambiguous observation of subband transitions from longitudinal valley and oblique valleys in IV–VI multiple quantum wells

Dai

Johnson

et al. 2001

Applied Physics Letters

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PbSe/PbSrSe multiple-quantum-well (MQW) structures were grown on BaF2(111) substrates by molecular-beam epitaxy and characterized by Fourier transform infrared transmission spectroscopy. To reduce unwanted Fabry–Pérot interference fringes, the top surface of the MQW samples was coated with an anti-interference film, enabling clear observation of subband transitions without superposed interference fringes. Transition energies involving longitudinal and oblique valleys were unambiguously resolved and are in good agreement with calculations made using the envelope wave function approximation.

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“…It is well known that the band nonparabolicity in QW systems has important influences on energy levels of the electron or hole and other relevant physical properties [26 -34], especially for relatively narrow QWs and high energy levels [30][31][32]. When the band nonparabolicity was treated in theoretical Original Paper works, the EDEM approach has been widely adopted [26][27][28][29][30][31][32][33][34], which gave quite reasonable calculated results compared with experimental data [27].…”

Section: Theorymentioning

confidence: 81%

Calculation of linear and nonlinear intersubband refractive‐index changes in an asymmetrical semiparabolic quantum well with applied electric field

Zhang

Shi

2005

Physica Status Solidi (b)

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By using the displacement harmonic variant method and the compact density matrix approach, the linear and nonlinear intersubband refractive-index changes (RICs) in a semiparabolic quantum well (QW) with an applied electric field have been investigated in detail. Simple analytical formulae for the linear and nonlinear RICs in the system were also deduced. The effect of the band nonparabolicity has been taken into account. Numerical calculations of typical GaAs semiparabolic QWs were performed. The dependence of the linear and nonlinear RICs on the incident optical intensity, the frequency of the confined potential of the semiparabolic quantum well, and the strength of the applied electric field were discussed under both conditions of considering and ignoring the band nonparabolicity. Results reveal that the RICs in the semiparabolic quantum-well system sensitively depend on these factors.

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Effects of band nonparabolicity on the gain and current density in EuSe-PbSe/sub 0.78/Te/sub 0.22/-EuSe IV-VI semiconductor quantum-well lasers

Cited by 16 publications

References 16 publications

Optical transitions inPbTe∕CdTequantum dots

Optical transitions inPbTe∕CdTequantum dots

Unambiguous observation of subband transitions from longitudinal valley and oblique valleys in IV–VI multiple quantum wells

Calculation of linear and nonlinear intersubband refractive‐index changes in an asymmetrical semiparabolic quantum well with applied electric field

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