Effects of BEOL on self-heating and thermal coupling in SiGe multi-finger HBTs under real operating condition

Dwivedi, A.D.D.; Chakravorty, Anjan; D'Esposito, Rosario; Sahoo, Amit Kumar; Fregonèse, Sébastien; Zimmer, Thomas

doi:10.1016/j.sse.2015.09.016

Cited by 14 publications

(14 citation statements)

References 21 publications

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“…The reduction of c ij with increasing P diss is due to the positional temperature-dependent thermal conductivity of silicon within the device. The same trend has been reported in other works such as [17,18,20]. For the multifinger device housed within DT, we employed the thermal spread model as detailed in Section 2.4 considering adiabatic boundary conditions at DT [13] to estimate ∆T jj,dt .…”

Section: Resultsmentioning

confidence: 99%

“…However to evaluate c ij analytically from (2), one should have prior information of both ∆T jj and ∆T ij . The work in [18] empirically modeled c ij to include the effect of thermal coupling in trench isolated multifinger transistors. Although the results show good agreement with TCAD simulations, the model is not geometrically scalable due to its empirical nature.…”

Section: Introductionmentioning

confidence: 99%

“…Figure 2b shows that in case of shallow trench isolated (STI) multifinger structures, the model of [19] yields further erroneous results for c ij with maximum error of around 57% when compared with 3D TCAD simulation. Note that following the standard practice, c ij is represented in percentage which is obtained by multiplying Equation (2) by 100 [17,18,20]. The poor modeling results in Figure 2a,b indicate the importance of using a temperature dependent thermal conductivity in the modeling framework and further to include the specific effects originating from the trench-isolations.…”

Section: Introductionmentioning

confidence: 99%

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Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part I—Model Development

et al. 2020

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In this part, we propose a step-by-step strategy to model the static thermal coupling factors between the fingers in a silicon based multifinger bipolar transistor structure. First we provide a physics-based formulation to find out the coupling factors in a multifinger structure having no-trench isolation (cij,nt). As a second step, using the value of cij,nt, we propose a formulation to estimate the coupling factor in a multifinger structure having only shallow trench isolations (cij,st). Finally, the coupling factor model for a deep and shallow trench isolated multifinger device (cij,dt) is presented. The proposed modeling technique takes as inputs the dimensions of emitter fingers, shallow and deep trench isolations, their relative locations and the temperature dependent material thermal conductivity. Coupling coefficients obtained from the model are validated against 3D TCAD simulations of multifinger bipolar transistors with and without trench isolations. Geometry scalability of the model is also demonstrated.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part I—Model Development

et al. 2020

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“…The Back-End-Of-Line (BEOL) structure was found to play a marginal role due to the absence of the metal-via stack above the emitter. This analysis has been recently extended to cover the influence of BEOL on the thermal behavior of multi-finger devices, with emphasis on the coupling among fingers [Dwi16].…”

Section: Thermal Simulationmentioning

confidence: 99%

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2018

Southeast Asian Ephemeris

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“…This makes the straightforward application of superposition to include both the self-heating and thermal coupling effects in calculating the overall finger temperature questionable. The real operating condition within a power amplifier circuit exciting all the fingers in a multi-finger transistor together instead of exciting one finger at a time was elaborated in [1]. A state-of-theart static thermal model to cater the self-heating as well as thermal coupling effects in an n-finger transistor requires n 2 number of nodes as reported in [2].…”

Section: Introductionmentioning

confidence: 99%

An Efficient Thermal Model for Multifinger SiGe HBTs Under Real Operating Condition

Nidhin

Pande

Yadav³

et al. 2020

IEEE Trans. Electron Devices

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In this work, we present a simple analytical model for electrothermal heating in multifinger bipolar transistors under realistic operating condition where all fingers are heating simultaneously. The proposed model intuitively incorporates the effect of thermal coupling among the neighboring fingers in the framework of self-heating bringing down the overall model complexity. Compared to the traditional thermal modeling approach for an n-finger transistor where the number of circuit nodes increases as n 2 , our model requires only n-number of nodes. The proposed model is scalable for any number of fingers and with different emitter geometries. The model is validated with 3D thermal simulations and measured data from STMicroelectronics B4T technology. The Verilog-A implemented model simulates 40% faster than the conventional model in a transient simulation of a five-finger transistor.

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Effects of BEOL on self-heating and thermal coupling in SiGe multi-finger HBTs under real operating condition

Cited by 14 publications

References 21 publications

Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part I—Model Development

Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part I—Model Development

5. Reliability

An Efficient Thermal Model for Multifinger SiGe HBTs Under Real Operating Condition

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