Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi‐induced acceptor states

Pettinari, G.; Polimeni, A.; Capizzi, M.; Engelkamp, Hans; Christianen, Peter C. M.; Maan, J. C.; Patanè, A.; Tiedje, T.

doi:10.1002/pssb.201200463

Cited by 20 publications

(14 citation statements)

References 47 publications

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“…Pettinari et al [220,224] studied transport properties of GaAs 1-x Bi x films. The undoped GaAsBi epilayers demonstrates p-type conductivity in a wide range of Bi-concentrations (0.6% ≤ x ≤ 10.6%).…”

Section: Transport Propertiesmentioning

confidence: 99%

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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Abstract:Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

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Section: Transport Propertiesmentioning

confidence: 99%

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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“…[ 23 ] Besides, the exciton reduced mass and hole mobility also were reported to be dependent on the Bi concentration. [ 24 ] Furthermore, GaAsBi has a large spin–orbit splitting energy which is useful to suppress Auger recombination loss in near to midinfrared lasers. This can be achieved when the spin–orbit splitting energy is larger than the bandgap of GaAsBi for [Bi] > 11%.…”

Section: Introductionmentioning

confidence: 99%

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

Richards

Bailey

Liu

et al. 2021

Physica Status Solidi (b)

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GaAsBi has been researched as a candidate material for optoelectronic devices for around two decades. Bi‐induced localized states induce a rapid rising of the valence band edge through a band anticrossing interaction, which has a profound effect on the bandgap and the spin–orbit splitting. The band engineering possible, even with just a few percent bismuth, makes GaAsBi an attractive material for THz emitters, telecommunication lasers, and low noise photodetectors, among other devices. There has been substantial progress in some of these areas; however, progress toward many of the potential applications of GaAsBi has been hindered by device quality issues, brought about by the low substrate temperatures necessary for the growth of GaAsBi with sufficiently large Bi fractions. This review, presents an overview of the applications for which GaAsBi has been advocated and the key results in these areas. The molecular beam epitaxy growth and postgrowth processing of GaAsBi are then explored as well as the novel techniques that have been suggested to improve material quality.

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“…Dilute incorporation of large Bi atoms into GaAs induces changes to the physical and electronic properties of the host [1][2][3][4]. Bi induces a (temperature-independent) strong decrease in the bandgap energy and a giant increase in the spin-orbit splitting [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration

Steele¹,

Lewis²,

Henini³

et al. 2014

Opt. Express

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Abstract:We report room-temperature Raman scattering studies of nominally undoped (100) GaAs 1−x Bi x epitaxial layers exhibiting Biinduced (p-type) longitudinal-optical-plasmon-coupled (LOPC) modes for 0.018 ≤ x ≤ 0.048. Redshifts in the GaAs-like optical modes due to alloying are evaluated and are paralleled by strong damping of the LOPC. The relative integrated Raman intensities of LO(Γ) and LOPC A LO /A LOPC are characteristic of heavily doped p-GaAs, with a remarkable near total screening of the LO(Γ) phonon (A LO /A LOPC → 0) for larger Bi concentrations. A method of spectral analysis is set out which yields estimates of hole concentrations in excess of 5 × 10 17 cm −3 and correlates with the Bi molar fraction. These findings are in general agreement with recent electrical transport measurements performed on the alloy, and while the absolute size of the hole concentrations differ, likely origins for the discrepancy are discussed. We conclude that the damped LO-phonon-hole-plasmon coupling phenomena plays a dominant role in Raman scattering from unpassivated nominally undoped GaAsBi.

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Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi‐induced acceptor states

Cited by 20 publications

References 47 publications

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration

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