Effects of Bi2Mo2O9 addition on the sintering characteristics and microwave dielectric properties of BiSbO4 ceramics

Wang, Sea-Fue; Hsu, Yung−Fu; Wang, Yuh-Ruey; Huang, Yung Han

doi:10.1016/j.jeurceramsoc.2011.07.005

Cited by 6 publications

(5 citation statements)

References 17 publications

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“…It is well known that the temperature stability of the materials is crucial for applications and should not exceed a few ppm/ • C. 1,14,15 In the previous section, we found that τ f value of La 3 Ti 2 TaO 11 is still high, which needs to be suppressed for commercial applications. Generally, two main approaches have been used to tune τ f of microwave dielectric ceramics including partial cation substitution to form a solid solution and formation of composite materials with opposite sign of τ f .…”

Section: Effect Of Grain Orientation On the Microwave Dielectric Propmentioning

confidence: 75%

Microwave dielectric properties of La3Ti2TaO11 ceramics with perovskite-like layered structure

Wei

Yan

et al. 2012

Journal of the European Ceramic Society

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Section: Effect Of Grain Orientation On the Microwave Dielectric Propmentioning

confidence: 75%

Microwave dielectric properties of La3Ti2TaO11 ceramics with perovskite-like layered structure

Wei

Yan

et al. 2012

Journal of the European Ceramic Society

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“…From factor group analysis it can be established that the BiSbO 4 -type structure presents 15 Raman-active phonons (Γ = 8B g + 7A g ), 18 infrared (IR)-active phonons (Γ = 9B u + 9A u ), and three acoustic phonons (Γ = 2B u + 1A u ) at the zone center. Only four Raman-active modes have been earlier measured for BiSbO 4 , and there is no report on IR-active modes in the literature. Here we report new Raman and IR experiments as well as lattice-dynamics calculations.…”

Section: Resultsmentioning

confidence: 99%

“… a The relative difference between measured and calculated frequencies is also given ( R ω ) as well as the calculated pressure coefficients, dω DFT /d P (in cm –1 /GPa), and the Grüneisen parameter (γ). Phonon frequencies from ref are included for comparison. …”

Section: Resultsmentioning

confidence: 99%

“…Our wave numbers agree within experimental accuracy with those of the four modes that were previously measured. 6 In Figure 3 and Table 3, it can be seen that in the Raman spectrum there are four modes for wave numbers larger than 600 cm -1 and the rest of the modes are below 454 cm -1 . The…”

Section: Amentioning

confidence: 95%

“…These compounds have been proposed for applications such a photocatalytic degradation of benzene and organic dyes. , Among them BiSbO 4 is one of the most promising compounds . The crystal structure of BiSbO 4 at ambient pressure has been accurately determined, but only a few of its Raman-active modes have been measured, and its infrared (IR)-active modes are not known yet. However, attempts have been made to determine the electronic band gap, but values ranging from 2.1 to 3.5 eV can be found in the literature. ,,, …”

Section: Introductionmentioning

confidence: 99%

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High-Pressure Crystal Structure, Lattice Vibrations, and Band Structure of BiSbO₄

et al. 2016

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The high-pressure crystal structure, lattice-vibrations, and electronic band structure of BiSbO 4 were studied by ab initio simulations. We also performed Raman spectroscopy, infrared spectroscopy, and diffuse-reflectance measurements, as well as synchrotron powder x-ray diffraction. High-pressure x-ray diffraction measurements show that the crystal structure of BiSbO 4 remains stable up to at least 70 GPa, unlike other known MTO 4 -type ternary oxides. These experiments also give information on the pressure dependence of the unit-cell parameters. Calculations properly describe the crystal structure of BiSbO 4 and the changes induced by pressure on it. They also predict a possible high-pressure phase. A roomtemperature pressure-volume equation of state is determined and the effect of pressure on the coordination polyhedron of Bi and Sb is discussed. Raman-and infrared-active phonons have been measured and calculated. In particular, calculations provide assignments for all the vibrational modes as well as their pressure dependence. In addition, the band structure and electronic density of states under pressure were also calculated. The calculations combined with the optical measurements allow us to conclude that BiSbO 4 is an indirect-gap semiconductor, with an electronic band gap of 2.9(1) eV. Finally, the isothermal compressibility tensor for BiSbO 4 is given at 1.8 GPa. The experimental (theoretical) data revealed that the direction of maximum compressibility is in the (0 1 0) plane at approximately 33º (38º) to the c-axis and 47º (42º) to the a-axis. The reliability of the reported results is supported by the consistency between experiments and calculations.

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List of Low‐Loss Ceramic Dielectric Materials and Their Properties

2017

Microwave Materials and Applications 2V Set

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AbbreviationsST = sintering temperature ( • C) r = relative permittivity , f = measurement frequency (GHz) f = coefficient of temperature variation of resonant frequency (ppm/ • C) No. = serial number Qf = quality factor frequency product (GHz)The table lists the key property data of microwave dielectric materials available from published materials. These data are the relative permittivity ( r ), the product of the Q-factor and the frequency (Qf ), the frequency of measurement (f), and the temperature coefficient of the resonant frequency ( f ). In tabulating these data, we make no judgment on the measurement method and the reliability of the result. It is known that the ceramic properties such as porosity, grain size, raw materials used, impurities, measurement methods, and equipment used for measurements affect the dielectric properties and readers should be aware that exact comparison of data on materials of identical composition and manufactured in different laboratories using different processing conditions and measured by different methods would be expected to lead to small variations in properties. The data of dielectric measurements carried out using impedance methods at low (MHz) frequency is excluded as the errors in these methods mean that a loss tangent less than 10 −3 is unreliable. The data are arranged in the order of increasing relative permittivity. The quality factor of the microwave dielectric ceramics decrease significantly with increasing relative permittivity, as shown in Figure A.1. The inset in the figure shows the variation of quality factor frequency product with Microwave Materials and Applications, First Edition. Edited by Mailadil T. Sebastian, Rick Ubic and Heli Jantunen.

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Effects of Bi2Mo2O9 addition on the sintering characteristics and microwave dielectric properties of BiSbO4 ceramics

Cited by 6 publications

References 17 publications

Microwave dielectric properties of La3Ti2TaO11 ceramics with perovskite-like layered structure

Microwave dielectric properties of La3Ti2TaO11 ceramics with perovskite-like layered structure

High-Pressure Crystal Structure, Lattice Vibrations, and Band Structure of BiSbO₄

List of Low‐Loss Ceramic Dielectric Materials and Their Properties

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Effects of Bi2Mo2O9 addition on the sintering characteristics and microwave dielectric properties of BiSbO4 ceramics

Cited by 6 publications

References 17 publications

Microwave dielectric properties of La3Ti2TaO11 ceramics with perovskite-like layered structure

Microwave dielectric properties of La3Ti2TaO11 ceramics with perovskite-like layered structure

High-Pressure Crystal Structure, Lattice Vibrations, and Band Structure of BiSbO4

List of Low‐Loss Ceramic Dielectric Materials and Their Properties

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High-Pressure Crystal Structure, Lattice Vibrations, and Band Structure of BiSbO₄