Effects of Bi4Ti3O12 addition on the microstructure and dielectric properties of Mn-doped BaTiO3-based X8R ceramics

Jain, T. A.; Chen, C. C.; Fung, Kuan‐Zong

doi:10.1016/j.jallcom.2008.09.014

Cited by 19 publications

(10 citation statements)

References 15 publications

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“…3, it can be seen that the Tc firstly increased from 132 to 142°C and then decreased with the increase of BIT, which was coincided with the research of T.A. Jain [13]. Compared with the results in literature [14], the Tc was a bit higher after adding Yb 2 O 3 .…”

Section: Methodssupporting

confidence: 84%

Lead-free PTCR ceramics based on ytterbium doped (1 − x)BaTiO3-xBi4Ti3O12

Wei

et al. 2011

J Mater Sci: Mater Electron

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Ytterbium (Yb)-doped (1 -x)BaTiO 3 -xBi 4-Ti 3 O 12 (abbreviated as BT-BIT, where x = 0, 0.005, 0.01, 0.015, 0.02 and 0.03) semiconducting ceramics were fabricated by the conventional mixed oxide method, all the samples were sintered in a pure N 2 atmosphere and annealed in air for several hours. The Curie temperature (Tc) firstly increased and then decreased with the increase of BIT, which corresponded to the trend of c/a value. In addition, the effect of Yb 3? on the PTCR was also investigated. It was found that the Curie temperature was shifted to a higher level and the dielectric constant decreased with the increase of Yb 3? .

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Section: Methodssupporting

confidence: 84%

Lead-free PTCR ceramics based on ytterbium doped (1 − x)BaTiO3-xBi4Ti3O12

Wei

et al. 2011

J Mater Sci: Mater Electron

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“…(3), the temperature profile has two very distinct characteristics (thermal gradients). These temperature gradients can be related to: i) the approximation of the heating source (18 o C/mm); ii) the fast rise of the temperature due to the translation of the film towards the laser line (1 mm in diameter) (255 o C/mm). As a result, of i and ii, the thick film is sintered with two distinct heating rates and also two different steps of temperature.…”

Section: Resultsmentioning

confidence: 99%

“…small increment of the grain size morphology, becoming abrupt around the melting points with increasing firing temperature [4,17]. In fact, it has been recently reported that the BIT introduction in BaTiO 3 based materials has resulted in an increase in the grains growth [18].…”

Section: Resultsmentioning

confidence: 99%

Thick Film Laser Sintering: An Evidence for Two-step Process

Antonelli¹,

Andreeta²,

Botero³

et al. 2013

TOCRYJ

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Abstract:The results for the sintering of Bi 4 Ti 3 O 12 (BIT)-doped BaTi 0.85 Zr 0.15 O 3 (BTZ) thick films, deposited by electrophoresis, using as heating source a CO 2 laser are presented. The thermal process associated to the laser scanning sintering (LSS) acted in a similar way as a two-step-sintering process. This characteristic together with the high heating rate allowed us to obtain thick films with an average grain size of 200 nm, high relative density (~96%) and with a homogeneous microstructure. The X ray diffraction profile analysis show evidences for Bi 3+ replacing Ba 2+ at the A sites.

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“…(1) It is possibly because the Ti-site vacancies increase with higher CBT content, resulting in the instability of the BST structure which leads to the unknown bismuth-layer-type secondary phase [23]. When the CBT content is up to 6% , the diffraction peaks assigned to CBT are observed, which implying CBT excesses the limits of the solid solution.…”

Section: Resultsmentioning

confidence: 99%

“…In addition, recently, some perovskitetype bismuth-based compounds with relatively high Curie temperature (T C ) have been used to increase the T C of BaTiO 3based materials, enhances the capacitance stability at high temperatures and also decrease the sintering temperature due to its low melting point and liquid phase sintering [23][24][25][26]. From these points of view, in this study, a series of new leadfree ceramics compounds with a general formula (1x)Ba 0.67 Sr 0.…”

Section: Introductionmentioning

confidence: 99%

Dielectric properties and relaxor behavior of Ba<inf>0.67</inf>Sr<inf>0.33</inf>TiO<inf>3</inf>-CaBi<inf>4</inf>Ti<inf>4</inf>O<inf>15</inf> ceramics

Liu

et al. 2012

Proceedings of ISAF-ECAPD-PFM 2012

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1-x)Ba 0.67 Sr 0.33 TiO 3 (BST)+xCaBi 4 Ti 4 O 15 (CBT) (x=0, 2%, 4%, 6% and 8%) lead-free relaxor ferroelectric ceramics with submicro grain size of about 200nm were prepared by solidstate reactions. Structure and dielectric properties of BST-CBT have been investigated. X-ray diffraction patterns show a relative low degree of solubility as a result of coupled substitutions of Bi 3+ and Ca 2+ both on the A site and the specific structure of CBT. The temperature and frequency dependences of the dielectric constant indicate a crossover from a normal ferroelectric to relaxor behavior. The degrees of diffuseness and relaxor behavior are found to increase with the increasing amount of CBT. The frequency dependence of the temperature of dielectric peak Tm can be well described by Vogel-Fulcher relation. The activation energy Ea increases with x increasing, indicating the more and more energy for the polarization reversal of micropolar regions, which is associated with the enhanced interactions of polar domains.

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Effects of Bi4Ti3O12 addition on the microstructure and dielectric properties of Mn-doped BaTiO3-based X8R ceramics

Cited by 19 publications

References 15 publications

Lead-free PTCR ceramics based on ytterbium doped (1 − x)BaTiO3-xBi4Ti3O12

Lead-free PTCR ceramics based on ytterbium doped (1 − x)BaTiO3-xBi4Ti3O12

Thick Film Laser Sintering: An Evidence for Two-step Process

Dielectric properties and relaxor behavior of Ba<inf>0.67</inf>Sr<inf>0.33</inf>TiO<inf>3</inf>-CaBi<inf>4</inf>Ti<inf>4</inf>O<inf>15</inf> ceramics

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