Effects of biased irradiation on charge trapping in HfO2 dielectric thin films

Mu, Yuguang; Zhao, Ce Zhou; Lu, Qifeng; Zhao, Chun; Qi, Yanyuan; Lam, Sang; Mitrović, Ivona Z.; Taylor, Stephen; Chalker, Paul R.

doi:10.1063/1.4999899

Cited by 4 publications

(3 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The results show that there is no significant correlation between the charge variation of the oxide layer and irradiation bias, irradiation dose rate and irradiation radiation. In most cases such as Felix's [45,46] [29,30] and our previous work [31], the positive net charge will be generated in the oxide layer. In the 2nd case such as Kang's [25] work, the negative net charge will be generated in the oxide layer.…”

Section: Oxide Trapped Charge Densitymentioning

confidence: 84%

“…Compared with SiO 2 dielectrics, the high-k dielectrics are more susceptible to irradiation effects than the thermal oxides with comparable effective thickness [16]. Therefore, many works studied the characteristics of HfO 2 MOS capacitors or devices induced by gamma irradiation [23][24][25][26][27][28][29][30][31], found that traps in HfO 2 could trap holes [23-25, 27, 28, 31] or electrons [25,29,31], causing a negative or positive shift of the C-V curves, respectively. Meanwhile, the interface traps increasing was also observed [23,31] except Kang [25] and Maurya's [27,28] results, this might come from the difference in sample preparation and irradiation conditions.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Synergistic effects in MOS capacitors with an Au/HfO₂–SiO₂/Si structure irradiated with neutron and gamma ray

Shi¹,

Wang²,

Zhang³

et al. 2021

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

The properties of oxide trapped charges and interface state density in the metal oxide semiconductor (MOS) capacitors with an Au/HfO2-SiO2/Si structure were investigated under irradiation of 14 MeV neutron and 60Co gamma-ray. In the mixed neutron and gamma irradiation environment, the formation of the oxide trapped charges in the HfO2-SiO2 layer is determined by the total deposited ionization energy, i.e. the sum of ionization energy deposition of the neutrons and the accompanying gamma rays, while the influence of the displacement damage caused by 14 MeV neutrons can be ignored. The interface state density depends not only on the ionizing energy loss (IEL) but also the non-ionizing energy loss (NIEL), and NIEL plays a major role below the critical neutron fluence of 4.5×1012 n/cm2. The synergistic effect of the interface state is observed increases with energy deposition in the oxide at lower fluences, while decreasing above the critical fluence. These results confirm the existence of the synergistic effect of neutron and gamma irradiation in damaging HfO2 MOS devices.

show abstract

Section: Oxide Trapped Charge Densitymentioning

confidence: 84%

Section: Introductionmentioning

confidence: 99%

Synergistic effects in MOS capacitors with an Au/HfO₂–SiO₂/Si structure irradiated with neutron and gamma ray

Shi¹,

Wang²,

Zhang³

et al. 2021

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Therefore, the drain current rapidly decreases under light illumination due to the photogating effect shown in Figures b and c. Photogating effects disappear immediately along with increasing induced electrical field ( V IE ) in lightly n-doped Si, , resulting in the gate voltage to shift to 2 V + V IE shown in Figure c and Figure S3d when the light is turned off. It can be seen from Figure a that both Δ V IE and Δ V PV are very small and Δ V IE is less than Δ V PV (5 mV).…”

Section: Results and Discussionmentioning

confidence: 99%

Optoelectronic Properties of Printed Photogating Carbon Nanotube Thin Film Transistors and Their Application for Light-Stimulated Neuromorphic Devices

Shao

Wang

Yang

et al. 2019

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Artificial synapses/neurons based on electronic/ionic hybrid devices have attracted wide attention for brain-inspired neuromorphic systems since it is possible to overcome the von Neumann bottleneck of the neuromorphic computing paradigm. Here, we report a novel photoneuromorphic device based on printed photogating single-walled carbon nanotube (SWCNT) thin film transistors (TFTs) using lightly n-doped Si as the gate electrode. The drain currents of the printed SWCNT TFTs can gradually increase to over 3000 times of their starting value after being pulsed with light stimulation, and the electrical signals can maintain for over 10 min. These characteristics are similar to the learning and memory functions of brain-inspired neuromorphic systems. The working mechanism of the light-stimulated neuromorphic devices is investigated and described here in detail. Important synaptic characteristics, such as low-pass filtering characteristics and nonvolatile memory ability, are successfully emulated in the printed light-stimulated artificial synapses. It demonstrates that the printed SWCNT TFT photoneuromorphic devices can act as the nonvolatile memory units and perform photoneuromorphic computing, which exhibits potential for future neuromorphic system applications.

show abstract

Bipolar Cu/HfO2/p++ Si Memristors by Sol-Gel Spin Coating Method and Their Application to Environmental Sensing

Hadi

Humood

Jaoudé

et al. 2019

Sci Rep

View full text Add to dashboard Cite

In this paper, the memristive switching behavior of Cu/ HfO 2 /p ++ Si devices fabricated by an organic-polymer-assisted sol-gel spin-coating method, coupled with post-annealing and shadow-mask metal sputtering steps, is examined. HfO 2 layers of about 190 nm and 80 nm, are established using cost-effective spin-coating method, at deposition speeds of 2000 and 4000 rotations per minute (RPM), respectively. For two types of devices, the memristive characteristics ( V on , I on , and V reset ) and device-to-device electrical repeatability are primarily discussed in correlation with the oxide layer uniformity and thickness. The devices presented in this work exhibit an electroforming free and bipolar memory-resistive switching behavior that is typical of an Electrochemical Metallization (ECM) I-V fingerprint. The sample devices deposited at 4000 RPM generally show less variation in electrical performance parameters compared to those prepared at halved spin-coating speed. Typically, the samples prepared at 4000 RPM (n = 8) display a mean switching voltage V on of 3.0 V (±0.3) and mean reset voltage V reset of −1.1 V (±0.5) over 50 consecutive sweep cycles. These devices exhibit a large R off / R on window (up to 10 4 ), and sufficient electrical endurance and retention properties to be further examined for radiation sensing. As they exhibit less statistical uncertainty compared to the samples fabricated at 2000 RPM, the devices prepared at 4000 RPM are tested for the detection of soft gamma rays (emitted from low-activity Cs-137 and Am-241 radioactive sources), by assessing the variation in the on-state resistance value upon exposure. The analysis of the probability distributions of the logarithmic R on values measured over repeated ON-OFF cycles, before, during and after exposing the devices to radiation, demonstrate a statistical difference. These results pave the way for the fabrication and development of cost-effective soft-gamma ray detectors.

show abstract

Effects of biased irradiation on charge trapping in HfO2 dielectric thin films

Cited by 4 publications

References 17 publications

Synergistic effects in MOS capacitors with an Au/HfO₂–SiO₂/Si structure irradiated with neutron and gamma ray

Synergistic effects in MOS capacitors with an Au/HfO₂–SiO₂/Si structure irradiated with neutron and gamma ray

Optoelectronic Properties of Printed Photogating Carbon Nanotube Thin Film Transistors and Their Application for Light-Stimulated Neuromorphic Devices

Bipolar Cu/HfO2/p++ Si Memristors by Sol-Gel Spin Coating Method and Their Application to Environmental Sensing

Contact Info

Product

Resources

About

Effects of biased irradiation on charge trapping in HfO2 dielectric thin films

Cited by 4 publications

References 17 publications

Synergistic effects in MOS capacitors with an Au/HfO2–SiO2/Si structure irradiated with neutron and gamma ray

Synergistic effects in MOS capacitors with an Au/HfO2–SiO2/Si structure irradiated with neutron and gamma ray

Optoelectronic Properties of Printed Photogating Carbon Nanotube Thin Film Transistors and Their Application for Light-Stimulated Neuromorphic Devices

Bipolar Cu/HfO2/p++ Si Memristors by Sol-Gel Spin Coating Method and Their Application to Environmental Sensing

Contact Info

Product

Resources

About

Synergistic effects in MOS capacitors with an Au/HfO₂–SiO₂/Si structure irradiated with neutron and gamma ray

Synergistic effects in MOS capacitors with an Au/HfO₂–SiO₂/Si structure irradiated with neutron and gamma ray