Effects of bottom electrode on resistive switching of silver programmable metallization cells with Gd x O y /Al x O y solid electrolytes

Chan, Yu‐Wei; Chen, Wei-Fan; Wang, Jer‐Chyi; Lai, Chao‐Sung

doi:10.1016/j.vacuum.2016.09.018

Cited by 11 publications

(8 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…E form values found for LiCdF 3 and LiCdCl 3 are −20.61 and − 13.96 eV/atom, respectively. The cubic structure with a negative E form value indicates that the material is stable [25–27]. The concern E form of materials shows a negative value which proves that materials are stable.…”

Section: Resultsmentioning

confidence: 99%

Structural, electronic, and optical properties of Cd‐halide‐based inorganic LiCdX₃ (X = F, Cl) perovskites for photovoltaic applications: A density functional theory study

Ghani,

Sagir,

Tahir

et al. 2024

Int J of Quantum Chemistry

View full text Add to dashboard Cite

Halide base perovskite LiCdX3 (X = F, Cl) is tested by CASTEP (Cambridge Serial Total Energy Package) based on density function theory (DFT). The presented discussion is to explore the structural, electronic, and optical properties of LiCdX3 (X = F, Cl). The calculated values of the lattice parameter are found to be 3.8 Å and 5.27 Å of LiCdF3 and LiCdCl3 respectively. The ideal structure of LiCdX3 (X = F, Cl) is cubic and dynamically stable. Electronic properties show that materials are semiconductors. The results from band structure are further evaluated by the total and partial density of states. The partial and total density of states confirms the degree of localization of electrons. In optical properties, the highest absorption coefficient is observed in LiCdCl3. The material is half metallic and has a narrow indirect band gap which may be used in photovoltaic applications.

show abstract

Section: Resultsmentioning

confidence: 99%

Structural, electronic, and optical properties of Cd‐halide‐based inorganic LiCdX₃ (X = F, Cl) perovskites for photovoltaic applications: A density functional theory study

Ghani,

Sagir,

Tahir

et al. 2024

Int J of Quantum Chemistry

View full text Add to dashboard Cite

show abstract

“…The thermal coefficient of resistance at LRS was extracted and is found to be approximately −1.05 × 10 −2 K −1 , indicating the conductive filament of oxygen vacancies as proposed in our previous work. [ 62 ] Figure 4e shows the retention properties of the Gd x O y memristors with H 2 plasma surface modified CSA graphene BEs at room temperature. The resistance at LRS and HRS was measured at a 0.1 V reading voltage.…”

Section: Resultsmentioning

confidence: 99%

Compacted Self‐Assembly Graphene with Hydrogen Plasma Surface Modification for Robust Artificial Electronic Synapses of Gadolinium Oxide Memristors

Chan

et al. 2020

Adv Materials Inter

View full text Add to dashboard Cite

increasing the requirements of smart data computing and storage. However, for the conventional von Neumann computer architecture, owing to the separation between memory and computation functions, the data calculation rules and transmission speed between the central processing unit and memory segments limit the overall efficiency and computation time and dissipate a high processing power, which cannot satisfy the scenario of real-time applications. [1] By contrast, the human brain is a complex organ composed of ≈100 billion neurons and 60 trillion synapses with an average consumed power of ≈20 W and superior learning and cognitive abilities. [2] Therefore, an entirely new architecture concept of artificial intelligence (AI) has to be proposed to solve the limitations of latency and the issues of power consumption. For this purpose, deep learning is the core of AI based on the artificial neural networks, which is designed to mimic how the brain works. The neural networks consist of synapses, neurons, pulsed neural networks, perceptual systems, and so on. To simulate synapses, some nonvolatile memory devices have been proposed such as floating-gate (FG) flash memory, phase-change memory (PCM), memristor in resistive random-access memory (RRAM), and ferroic tunnel junctions. [3-6] Since the scaling of

show abstract

“…It can be observed that the operation power of the TLG/Ni sample at a set process is 7.72 nW, which is much lower than that of the r-TLG/Ir and B-TLG/Ir samples. The memory devices without TLG sheets were also investigated and have been proposed in our previous work . The memory with Ir-BE, labeled as Ir, showed a Schottky-emission-dominated RS at the interface between the Ir-BE and the RS layer, whereas the sample with Ni-BE, labeled as Ni, demonstrated a cation-dominated RS behavior within the Gd x O y /Al x O y layer.…”

Section: Resultsmentioning

confidence: 99%

“…The memory devices without TLG sheets were also investigated and have been proposed in our previous work. 43 The memory with Ir-BE, labeled as Ir, showed a Schottky-emission-dominated RS at the interface between the Ir-BE and the RS layer, whereas the sample with Ni-BE, labeled as Ni, demonstrated a cation-dominated RS behavior within the Gd x O y /Al x O y layer. The typical I−V characteristics and the statistical distributions of the operating voltages, resistances at the HRS and LRS, and the resistance ratio of the samples with Ir-and Ni-BEs are shown in Figure S7 of the Supporting Information.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Interface Modification of Bernal- and Rhombohedral-Stacked Trilayer-Graphene/Metal Electrode on Resistive Switching of Silver Electrochemical Metallization Cells

Wang

Chan

Chen

et al. 2017

ACS Appl. Mater. Interfaces

Self Cite

View full text Add to dashboard Cite

Bernal- and rhombohedral-stacked trilayer graphene (B- and r-TLG) on nickel (Ni) and iridium (Ir) films acting as bottom electrodes (BEs) of silver electrochemical metallization cells (Ag-EMCs) have been investigated in this study. Prior to the fabrication of the EMC devices, Raman mapping and atomic force microscopy are applied to identify the B- and r-TLG sheets, with the latter revealing a significant D peak and a rough surface for the Ir film. The Ag-EMCs with the stacked BE of r-TLG on the Ir film show a conductive mechanism of Schottky emission at the positive top electrode bias for both high- and low-resistance states that can be examined by the resistance change with the device area and are modulated by pulse bias operation. Thus, an effective electron barrier height of 0.262 eV at the r-TLG and Ir interface is obtained because of the conspicuous energy gap of r-TLG on the Ir film and the van der Waals (vdW) gap between the r-TLG and Ir contact metal. With the use of Ni instead of Ir contact metal, the Ag-EMCs with TLG BE demonstrate +0.3 V/-0.75 V operation voltages, more than 10 s data retention at 115 °C and 250 times endurance testing, making the TLG sheets suitable for low-power nonvolatile memory applications on flexible substrates.

show abstract

Effects of bottom electrode on resistive switching of silver programmable metallization cells with Gd x O y /Al x O y solid electrolytes

Cited by 11 publications

References 28 publications

Structural, electronic, and optical properties of Cd‐halide‐based inorganic LiCdX₃ (X = F, Cl) perovskites for photovoltaic applications: A density functional theory study

Structural, electronic, and optical properties of Cd‐halide‐based inorganic LiCdX₃ (X = F, Cl) perovskites for photovoltaic applications: A density functional theory study

Compacted Self‐Assembly Graphene with Hydrogen Plasma Surface Modification for Robust Artificial Electronic Synapses of Gadolinium Oxide Memristors

Interface Modification of Bernal- and Rhombohedral-Stacked Trilayer-Graphene/Metal Electrode on Resistive Switching of Silver Electrochemical Metallization Cells

Contact Info

Product

Resources

About

Effects of bottom electrode on resistive switching of silver programmable metallization cells with Gd x O y /Al x O y solid electrolytes

Cited by 11 publications

References 28 publications

Structural, electronic, and optical properties of Cd‐halide‐based inorganic LiCdX3 (X = F, Cl) perovskites for photovoltaic applications: A density functional theory study

Structural, electronic, and optical properties of Cd‐halide‐based inorganic LiCdX3 (X = F, Cl) perovskites for photovoltaic applications: A density functional theory study

Compacted Self‐Assembly Graphene with Hydrogen Plasma Surface Modification for Robust Artificial Electronic Synapses of Gadolinium Oxide Memristors

Interface Modification of Bernal- and Rhombohedral-Stacked Trilayer-Graphene/Metal Electrode on Resistive Switching of Silver Electrochemical Metallization Cells

Contact Info

Product

Resources

About

Structural, electronic, and optical properties of Cd‐halide‐based inorganic LiCdX₃ (X = F, Cl) perovskites for photovoltaic applications: A density functional theory study

Structural, electronic, and optical properties of Cd‐halide‐based inorganic LiCdX₃ (X = F, Cl) perovskites for photovoltaic applications: A density functional theory study