Effects of buried oxide layer on indium diffusion in separation by implantation of oxygen

Abstract

The diffusion of indium in both the top silicon and the buried oxide (BOX) layers in separation by implantation of oxygen (SIMOX) is investigated. For all indium-implanted samples, there is a significant redistribution of indium atoms from the top Si-BOX interface toward the bottom BOX-Si interface, thereby affecting the indium concentrations in the two silicon-BOX interfaces. In the case of relatively high-dose and high-energy indium implantation (1 ϫ 10 14 cm −2 at 200 keV), an anomalous segregation of indium is observed in both the bulk Si and the SIMOX substrates. However, there is a notable transportation of indium atoms from the top Si layer toward the bottom BOX-Si interface in the SIMOX, thereby affecting not only the indium concentrations in the two silicon-BOX interfaces but also the indium distribution in the top silicon layer. The unique indium-diffusion behavior in the SIMOX is believed to be a composite effect of indium trapping by the two Si-BOX interfaces, indium atoms being drawn away from the top silicon layer by the buried oxide, as well as implant damages in the top silicon. The asymmetrical structure of the BOX layer with Si islands accumulating at the bottom BOX-Si interface and the abundance of oxygen-related defects in the BOX layer are also believed to be responsible for the indium-diffusion behavior in the BOX layer.

Advanced Heterostructure Si-InSb on Insulator Formed by Bonding of Hydrogen Transferred Si Layer and Implanted SiO2 Film

“…Physical approach for InSb is based on high thermal mobilities of In and Sb atoms in Si/SiO 2 heterostructures and their segregation at the grain boundary. Particularly as it was shown in the works (7,8) In atoms implanted in Si or SiO 2 layers segregate to the interface between them at the annealing temperatures >800 o C. The same behavior was observed for Sb atoms, but only in the case of implantation in silicon, because in SiO 2 these atoms are relatively immobile (9,10). Subsequent implantation of Sb and In atoms in silicon at high concentration allows to nucleate crystalline InSb embryo's at the defects in implanted layer (11).…”

Nanoscaled Silicon Based Heterostructures Formed by Interface Mediated Endotaxy

“…The choice for InSb is based on the high thermal mobilities of In and Sb-atoms in Si/SiO 2 heterostructures and their segregation to the grain boundary. Particularly as it was shown by Chen et al (7,8) In-atoms implanted in Si or SiO 2 layers segregate to the interface between them at annealing temperatures > 800 o C. The same behavior was observed for Sb-atoms, but only in the case of implantation in silicon, because in SiO 2 these atoms are relatively immobile (9,10). Subsequent implantation of Sb and In-atoms in silicon at high concentration allows to nucleate crystalline InSb embryo's at the defects 88 in the implanted layer (11).…”