Effects of Co content on the Cu diffusion barrier property of electroless NiCoP film

The effect of NH3 plasma pulse time on atomic layer-deposited TiN films using tetrakis-(dimethylamino) titanium as a metal precursor

“…and their nitrides, [4][5][6] and multi-component compound barriers, such as ZrTiNi and NiCoP. 7,8) Of these diffusion barriers, Ta/TaN and Ti/TaN bilayers are generally used against Cu diffusion in actual Cu interconnect technology; they exhibit good adhesion between Cu and the dielectric. 9,10) This is because Ti, Ta and their nitrides have favorable characteristics of electrical conductivity, thermal stability, mechanical strength, and resistance to Cu diffusion.…”