Effects of contact metals on minority carrier diffusion lengths in GaAs

Partin, D. L.; Milnes, A. G.; Vassamillet, L. F.

doi:10.1007/bf02655679

Cited by 28 publications

(11 citation statements)

References 50 publications

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“…First, all of the elements which increase Lp are either known to be acceptors or are expected to be on the basis of general trends. Second, in GaAs, no improvements in Lp are observed when metals such as Fe are heated in contact with GaAs until the treatment temperature is > 500~ and this is also the minimum temperature at which Ni can diffuse into GaAs and degrade Lp (2). The depth of Lp improvement and spread of the effect laterally across the surface are also consistent with the diffusion coefficient deduced for Ni.…”

Section: Discussion Of the Diffusion Length Studies--the Ef-supporting

confidence: 69%

“…This interpretation is supported by the fact that the distribution coefficient of Cu as well as Fe and Cr are about three orders of magnitude smaller in LPE than in ingot GaAs (36,41). Also, no impurity which we have diffused into LPE p-GaAs to date (Fe, Ni, Pd, Au, Pt, and V) has any effect on Ln (2). However, in VPE n-GaAs0.6P0.4, a Cu stripe similarly diffused at 500~ for 5 rain caused a uniform increase in Lp from 1.1 #m to 1.5 #m.…”

Section: Fig 2 Effect Of W In Improving Lp In Vpe N-gaasmentioning

confidence: 53%

“…It was unclear whether this small increase was caused by Co or was due to variation of Lp in the as-grown material. This LPE layer was doped with Sn at 1 • 101~ cm -8, and for such a dopant density diffusion lengths of this order are about what may be expected for direct band-to-band recombination action (2,28).…”

Section: Results Of the Metal Diffusion Studiesmentioning

confidence: 99%

“…In the present work, an Fe stripe evaporated from 5,9's pure material was diffused into VPE n-GaAs0. Nickel degrades Lp from 3.8 to 0.9 ~m in VPE nGaAs when diffused at 700~ for 5 min (2).…”

Section: Fig 2 Effect Of W In Improving Lp In Vpe N-gaasmentioning

confidence: 99%

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Hole Diffusion Lengths in VPE GaAs and GaAs0.6 P 0.4 Treated with Transition Metals

Partin

Milnes

Vassamillet

1979

J. Electrochem. Soc.

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The effects of several metals on L, in GaAs and GaAs0.6Po.4 have been evaluated. Diffusion of Co at 700~ for 5 rain into VPE n-GaAs0.6Po.4 is found to produce a considerable reduction of Lp. Lesser degradation is caused by Ni, whereas Cu, Cd, and Zn improve L,. In VPE n-GaAs, diffusions of Co, Cu, W, and Cd improve Lp. These improvements are believed to be caused by gettering of lifetime killing deep impurities, such as Co and Ni, by shallow diffused junctions. The metals that degrade LD appear to be ones with small tetrahedral covalent radii.

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Section: Discussion Of the Diffusion Length Studies--the Ef-supporting

confidence: 69%

Section: Fig 2 Effect Of W In Improving Lp In Vpe N-gaasmentioning

confidence: 53%

Section: Results Of the Metal Diffusion Studiesmentioning

confidence: 99%

Section: Fig 2 Effect Of W In Improving Lp In Vpe N-gaasmentioning

confidence: 99%

See 2 more Smart Citations

Hole Diffusion Lengths in VPE GaAs and GaAs0.6 P 0.4 Treated with Transition Metals

Partin

Milnes

Vassamillet

1979

J. Electrochem. Soc.

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“…(Contract number 77-7-0085.) levels is the search for recombination centres responsible for the discrepancy [7] between the measured diffusion lengths and those expected in pure GaAs, and actually observed in the best L.P.E. crystals [8].…”

mentioning

confidence: 99%

Electron and hole capture cross-sections at deep centers in gallium arsenide

Mitonneau¹,

Mircéa²,

Martin³

et al. 1979

Rev. Phys. Appl. (Paris)

160

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2014 Nous présentons une méthode, combinant l'excitation optique et le remplissage électrique de niveaux profonds, qui permet la mesure de la section de capture des pièges de minoritaires pour les porteurs majoritaires : par exemple 03C3n pour un piège à trous dans un matériau de type n. Cette méthode a été utilisée pour caractériser plusieurs centres profonds dans l'arseniure de gallium. Les résultats suivants ont été établis : le principal piège à électrons « EL 2 » n'est pas un tueur de durée de vie; le coefficient de température de l'énergie d'ionisation de plusieurs niveaux, y compris le niveau du chrome utilisé pour l'obtention des cristaux semi-isolants ; de très grandes (10-15 cm2 ou plus), et de très petites (10-21 cm2) sections de capture pour les électrons pour deux des niveaux étudiés ; des mécanismes de capture envisageables sont mentionnés dans ces demiers cas. Abstract. 2014 A method is presented, which combines optical excitation and electrical refilling of deep levels, allowing one to measure the majority carrier capture cross-section for minority carrier traps : e.g., 03C3n for a hole trap in n-type material. This method has been used to characterize many deep levels in gallium arsenide. The following results are obtained : the main electron trap « EL 2 » is not a hole lifetime killer; the temperature coefficient of the ionization energy for several levels, including the Cr level used for compensation in semi-insulating crystals ; very large (10-15 cm2 or more), and very small (10-21 cm2) electron capture cross-sections for two of the levels ; possible capture mechanisms for these last cases are mentioned.

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Acoustic Paramagnetic Resonance of Ni in GaAs

Rampton

Saker

1986

Phonon Scattering in Condensed Matter V

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Effects of contact metals on minority carrier diffusion lengths in GaAs

Cited by 28 publications

References 50 publications

Hole Diffusion Lengths in VPE GaAs and GaAs0.6 P 0.4 Treated with Transition Metals

Hole Diffusion Lengths in VPE GaAs and GaAs0.6 P 0.4 Treated with Transition Metals

Electron and hole capture cross-sections at deep centers in gallium arsenide

Acoustic Paramagnetic Resonance of Ni in GaAs

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