2008
DOI: 10.1016/j.jeurceramsoc.2007.06.007
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Effects of Cu and Zn co-doping on the electrical properties of Ni0.5Mn2.5O4 NTC ceramics

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Cited by 106 publications
(68 citation statements)
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“…[8][9][10][11] For such applications, different NMO film types or bulk devices with a wide range of dopants are commonly used in order to tune the device performance to the application's requirements. [12][13][14] Nevertheless, the pure NMO compound is still the subject of recent research efforts in order to establish new and more efficient synthesis routes [15][16][17][18][19][20][21] and thin and thick film production techniques. [22][23][24][25][26][27][28][29][30][31] Furthermore, the interplay between the physical properties and the Ni and Mn cation distribution on the tetrahedral and octahedral sublattices is still a matter of debate.…”
mentioning
confidence: 99%
“…[8][9][10][11] For such applications, different NMO film types or bulk devices with a wide range of dopants are commonly used in order to tune the device performance to the application's requirements. [12][13][14] Nevertheless, the pure NMO compound is still the subject of recent research efforts in order to establish new and more efficient synthesis routes [15][16][17][18][19][20][21] and thin and thick film production techniques. [22][23][24][25][26][27][28][29][30][31] Furthermore, the interplay between the physical properties and the Ni and Mn cation distribution on the tetrahedral and octahedral sublattices is still a matter of debate.…”
mentioning
confidence: 99%
“…In order to further decrease the resistivity, Cu is doped into nickel manganites, e.g., the resistivity of Cu 0.2 Ni 0.5 Mn 2.3 O 4  decreases to 70 Ω·cm. However, the doping of Cu will cause a harmful consequence, i.e., the resistivity drift rate is 14.9% after ageing at 150 ℃ for 500 h in air [9]. For improving the ageing characteristic, much work has been done by cation doping and microstructure modification [9][10][11].…”
Section: +mentioning
confidence: 99%
“…However, the doping of Cu will cause a harmful consequence, i.e., the resistivity drift rate is 14.9% after ageing at 150 ℃ for 500 h in air [9]. For improving the ageing characteristic, much work has been done by cation doping and microstructure modification [9][10][11]. For instance, Ma et al [12] reported that the resistivity drift for Ni 0.…”
Section: +mentioning
confidence: 99%
“…Various bulk ceramics and thin/thick films with a wide range of adjustable thermistor parameters can be used in order to satisfy the market needs in the different industrial field and tune the device performance to the specific requirements [1][2][3][4]. In general, the bulk ceramics can easily achieve low room-temperature resistivity (q 25 ) and high thermistor constant (b) by tuning the compositions and dopants [5,6]. For the thermistor thick/thin films, it is very difficult to obtain the low q 25 and high b.…”
Section: Introductionmentioning
confidence: 99%