Effects of deposition temperature on the electrical properties of Ti/SiC Schottky barrier diodes

Abstract

Ti Schottky contacts were deposited on n-type 4H-SiC at different temperatures ranging from 28 o C to 900 o C using a magnetron sputtering deposition system to fabricate Schottky barrier diodes. Post deposition annealing at 500 o C for up to 60 hours in vacuum was carried to further improve the contact properties. Optimum barrier height of 1.13 eV and ideality factor of 1.04 was obtained in contacts deposited at 200 o C and annealed for 60 hours. Under a reverse voltage bias of 400 V, the average leakage current on these set of diodes was 6.6 x 10 -8 A. Based on the x-ray diffraction analysis, TiC, Ti 5 Si 3 and Ti 3 SiC 2 were formed at the Ti/SiC interface. These results could be beneficial to improving the performance of 4H-SiC Schottky diodes for high power and high temperature applications. © 2017 Author (s)

Materials and Processes for Schottky Contacts on Silicon Carbide

“…Data are taken from Refs. [ 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 ].…”

Au grating on SiC substrate: simulation of high performance plasmonic Schottky barrier photodetector in visible and NIR regions

“…The deposition of ultra-thin Ti layer is achievable as demonstrated experimentally by Sobhani et al [3]. For calculations, Φ b values of 1.09 eV and 0.80 eV are considered for Ti/4H-SiC [32] and Ti/6H-SiC [21], respectively. These values indicate that the Ti/6H-SiC structure can lead to greater quantum efficiency (and, hence, responsivity) due to smaller Φ b value compared with Ti/4H-SiC structure.…”