Effects of Different Oxidation Degrees of Graphene Oxide on P-Type and N-Type Si Heterojunction Photodetectors

Shih, Ching-Kuei; Ciou, Yu-Tang; Chiu, Chian‐Song; Li, Yuru; Jheng, Jia-Syun; Chen, Yen-Chun; Lin, Chih‐Hong

doi:10.3390/nano8070491

Cited by 10 publications

(5 citation statements)

References 29 publications

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“…This result demonstrates that the reduction process used in this work has tuned the energy gap of the GO-based material, so that decreasing the GO oxidation degree it is possible to reduce the energy gap 50 , 51 .…”

Section: Resultsmentioning

confidence: 71%

Reduced graphene oxide on silicon-based structure as novel broadband photodetector

Bonavolontà

Vettoliere

Falco

et al. 2021

Sci Rep

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Heterojunction photodetector based on reduced graphene oxide (rGO) has been realized using a spin coating technique. The electrical and optical characterization of bare GO and thermally reduced GO thin films deposited on glass substrate has been carried out. Ultraviolet–visible–infrared transmittance measurements of the GO and rGO thin films revealed broad absorption range, while the absorbance analysis evaluates rGO band gap of about 2.8 eV. The effect of GO reduction process on the photoresponse capability is reported. The current–voltage characteristics and the responsivity of rGO/n-Si based device have been investigated using laser diode wavelengths from UV up to IR spectral range. An energy band diagram of the heterojunction has been proposed to explain the current versus voltage characteristics. The device demonstrates a photoresponse at a broad spectral range with a maximum responsivity and detectivity of 0.20 A/W and 7 × 1010 cmHz/W, respectively. Notably, the obtained results indicate that the rGO based device can be useful for broadband radiation detection compatible with silicon device technology.

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Section: Resultsmentioning

confidence: 71%

Reduced graphene oxide on silicon-based structure as novel broadband photodetector

Bonavolontà

Vettoliere

Falco

et al. 2021

Sci Rep

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“…The D band reflects the formation of disorders and defects including grain boundaries and heteroatoms introduced into the graphitic structure. A large integral area ratio of D band to G band, that is, I D / I G , somehow testifies a high degree of oxidation of GO . The X-ray photoelectron spectroscopy (XPS) survey spectrum reveals the characteristic peaks for C 1s and O 1s (see Figure S1, Supporting Information).…”

Section: Resultsmentioning

confidence: 97%

“…A large integral area ratio of D band to G band, that is, I D /I G , somehow testifies a high degree of oxidation of GO. 25 The X-ray photoelectron spectroscopy (XPS) survey spectrum reveals the characteristic peaks for C 1s and O 1s (see Figure S1, Supporting Information). The high-resolution C 1s XPS spectrum can be deconvoluted into three Gaussian peaks centered at binding energies of 287.9, 286.6, and 284.5 eV, which can be assigned to CO, C−O, and C−C bonds within the GO structure, respectively.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Radiation Enhancement by Graphene Oxide on Microelectromechanical System Emitters for Highly Selective Gas Sensing

Yuan

Liang

et al. 2019

ACS Sens.

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Infrared gas sensors have been proven promising for broad applications in Internet of Things and Industrial Internet of Things. However, the lack of miniaturized light sources with good compatibility and tunable spectral features hinders their widespread utilization. Herein, a strategy is proposed to increase the radiated power from microelectromechanical-based thermal emitters by coating with graphene oxide (GO). The radiation can be substantially enhanced, which partially stems from the high emissivity of GO coating demonstrated by spectroscopic methods. Moreover, the sp 2 structure within GO may induce plasmons and thus couple with photons to produce blackbody radiation and/or new thermal emission sources. As a proof-of-concept demonstration, the GO-coated emitter is integrated into a multifunctional monitoring platform and evaluated for gas detection. The platform exhibits sensitive and highly selective detection toward CO 2 at room temperature with a detection limit of 50 ppm and short response/recovery time, outperforming the state-of-the-art gas sensors. This study demonstrates the emission tailorability of thermal emitters and the feasibility of improving the associated gas sensing property, offering perspectives for designing and fabricating high-end optical sensors with cost-effectiveness and superior performance.

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“…The S2p 3/2 peak shifted from 99.63 eV to 99.81 eV, which could be due to a change in the conductivity type of silicon following P doping. The position of the Si2p peak in n-and p-type Si can differ by ~0.18 eV [48,49]. The preservation of such a shift after etching in the HF solution indicated that, unlike oxidation, doping occurred in the deep layers of silicon.…”

Section: The Surface Morphology and Structure Of Laser-doped N + P-simentioning

confidence: 99%

Pulsed Laser Phosphorus Doping and Nanocomposite Catalysts Deposition in Forming a-MoSx/NP-Mo//n+p-Si Photocathodes for Efficient Solar Hydrogen Production

et al. 2022

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Pulsed laser deposition of nanostructured molybdenum sulfide films creates specific nonequilibrium growth conditions, which improve the electrocatalytic properties of the films in a hydrogen evolution reaction (HER). The enhanced catalytic performance of the amorphous a-MoSx (2 ≤ x ≤ 3) matrix is due to the synergistic effect of the Mo nanoparticles (Mo-NP) formed during the laser ablation of a MoS2 target. This work looks at the possibility of employing a-MoSx/NP-Mo films (4 and 20 nm thickness) to produce hydrogen by photo-stimulated HER using a p-Si cathode. A simple technique of pulsed laser p-Si doping with phosphorus was used to form an n+p-junction. Investigations of the energy band arrangement at the interface between a-MoSx/NP-Mo and n+-Si showed that the photo-HER on an a-MoSx/NP-Mo//n+p-Si photocathode with a 20 nm thick catalytic film proceeded according to a Z-scheme. The thickness of interfacial SiOy(P) nanolayer varied little in photo-HER without interfering with the effective electric current across the interface. The a-MoSx/NP-Mo//n+p-Si photocathode showed good long-term durability; its onset potential was 390 mV and photocurrent density was at 0 V was 28.7 mA/cm2. The a-MoSx/NP-Mo//n+p-Si photocathodes and their laser-based production technique offer a promising pathway toward sustainable solar hydrogen production.

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Effects of Different Oxidation Degrees of Graphene Oxide on P-Type and N-Type Si Heterojunction Photodetectors

Cited by 10 publications

References 29 publications

Reduced graphene oxide on silicon-based structure as novel broadband photodetector

Reduced graphene oxide on silicon-based structure as novel broadband photodetector

Radiation Enhancement by Graphene Oxide on Microelectromechanical System Emitters for Highly Selective Gas Sensing

Pulsed Laser Phosphorus Doping and Nanocomposite Catalysts Deposition in Forming a-MoSx/NP-Mo//n+p-Si Photocathodes for Efficient Solar Hydrogen Production

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