Conductive
ultra-thin silver films are commonly fabricated by physical
vapor deposition methods such as evaporation or sputtering. The line-of-sight
geometry of these techniques impedes the conformal growth on substrates
with complex morphology. In order to overcome this issue, volume deposition
technologies such as chemical vapor deposition or atomic layer deposition
are usually preferred. However, the silver films fabricated using
these methods are generally non-electrically conductive for thicknesses
below 20–50 nm due to island formation. Here, we demonstrate
a novel approach for producing ultra-thin conductive silver layers
on complex substrates. Relying on chemical vapor-phase deposition
and plasma post-treatment, this two-step technique allows the synthesis
of highly conductive and uniform silver films with a critical thickness
lower than 15 nm and a sheet resistance of 1.6 Ω/□ for
a 40 nm-thin film, corresponding to a resistivity of 6.4 μΩ·cm.
The high infrared reflectance further demonstrates the optical quality
of the films, despite a still large root-mean-square roughness of
8.9 nm. We successfully demonstrate the highly conformal deposition
in lateral structures with an aspect ratio of up to 100. This two-step
deposition method could be extended to other metals and open new opportunities
for depositing electrically conductive films in complex 3D structures.