2016
DOI: 10.1016/j.surfcoat.2016.05.061
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Effects of e-beam deposited gate dielectric layers with atmospheric pressure plasma treatment for IGZO thin-film transistors

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Cited by 13 publications
(7 citation statements)
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“…The corresponding output characteristics present obvious pinch‐off and current saturation behaviors (Figure S2, Supporting Information). The related electrical parameters were derived from the transfer curves, showing a high on/off current ratio ( I on /I off ) of 2.8 × 10 8 , a low subthreshold swing (SS) of 0.43 V dec −1 , and a threshold voltage ( V TH ) of 2.6 V. Especially, the linear and saturation field‐effect mobility of the device is as high as 106 and 89.9 cm 2 V −1 s −1 , respectively, that is comparable or superior to the reported values of IGZO TFTs on SiO 2 /Si substrates (7–50 cm 2 V −1 s −1 ). High photoresponse properties can be obtained from the IGCO TFTs, because photoconductance is positively correlated with mobility in theory.…”
mentioning
confidence: 65%
“…The corresponding output characteristics present obvious pinch‐off and current saturation behaviors (Figure S2, Supporting Information). The related electrical parameters were derived from the transfer curves, showing a high on/off current ratio ( I on /I off ) of 2.8 × 10 8 , a low subthreshold swing (SS) of 0.43 V dec −1 , and a threshold voltage ( V TH ) of 2.6 V. Especially, the linear and saturation field‐effect mobility of the device is as high as 106 and 89.9 cm 2 V −1 s −1 , respectively, that is comparable or superior to the reported values of IGZO TFTs on SiO 2 /Si substrates (7–50 cm 2 V −1 s −1 ). High photoresponse properties can be obtained from the IGCO TFTs, because photoconductance is positively correlated with mobility in theory.…”
mentioning
confidence: 65%
“…Among them, amorphous InGaZnO (a‐IGZO) TFT is commonly used owing to its relatively high field‐effect mobility (µ FE , ≈10 cm 2 s −1 v −1 ) . However, the µ FE of a‐IGZO TFTs is still not high enough for more advanced applications such as three‐dimensional (3D) displays, flexible logic circuits, and system‐on‐panel devices …”
Section: Introductionmentioning
confidence: 99%
“…A qualitatively opposite evolution of film topography as a function of deposition temperature was observed in roll‐to‐roll deposition of silica‐like moisture barrier coatings at atmospheric pressure . The low roughness films can be used in applications where smooth coatings are desired, such as antifouling coatings and as interfacial layers in organic electronics …”
Section: Resultsmentioning
confidence: 96%