Effects of EL2 deep level in GaAs photoconductive switch

Shi, Wei; Liu, Rui; Wang, Jingli

doi:10.1117/12.835228

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2016

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“…8,9 In some instances, the defect traps electrons when they are accelerated into semi-insulating regions and may create regions of fixed trap charge that can ruin devices. 10 On the other hand, it can be deliberately introduced to increase resistivity of bulk GaAs so as to lower substrate capacitance and allow high frequency operation of devices.…”

Section: Introductionmentioning

confidence: 99%

The fine structure of electron irradiation induced EL2-like defects in n-GaAs

Tunhuma

Auret

Legodi

et al. 2016

Journal of Applied Physics

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Defects induced by electron irradiation in n-GaAs have been studied using deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS). The E 0.83 (EL2) is the only defect observed prior to irradiation. Ru/n-GaAs Schottky diodes were irradiated with high energy electrons from a Sr-90 radionuclide up to a fluence of 2.45 Â 10 13 cm À2 . The prominent electron irradiation induced defects, E 0.04 , E 0.14 , E 0.38 , and E 0.63 , were observed together with the metastable E 0.17 . Using L-DLTS, we observed the fine structure of a broad base EL2-like defect peak. This was found to be made up of the E 0.75 , E 0.83 , and E 0.85 defects. Our study reveals that high energy electron irradiation increases the concentration of the E 0.83 defect and introduces a family of defects with electronic properties similar to those of the EL2. V C 2016 AIP Publishing LLC. [http://dx

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Section: Introductionmentioning

confidence: 99%