The fine structure of electron irradiation induced EL2-like defects in <i>n</i>-GaAs

Tunhuma, Shandirai Malven; Auret, F.D.; Legodi, M.J.; Diale, M.

doi:10.1063/1.4945774

Cited by 12 publications

(9 citation statements)

References 44 publications

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“…The activation energy of R1 agrees perfectly with that of the EL2 defects (0.80 eV). 22 EL2 defects in GaAs has been generally accepted to be associated with As antisite (As Ga ) point defects, 27,28 which are known to be double donors. The singly charged state As Ga + has unpaired sp electrons and hence can be detected by ESR spectrum.…”

Section: Resultsmentioning

confidence: 99%

Point-defect-induced colossal dielectric behavior in GaAs single crystals

et al. 2017

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Section: Resultsmentioning

confidence: 99%

Point-defect-induced colossal dielectric behavior in GaAs single crystals

et al. 2017

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“…[12,13] Nevertheless, there are some existing exploratory research on the proton irradiation effects of the various III-V materials devices. [14][15][16][17] As a result, the degradation degree of the device characteristics after proton irradiation is directly related to the amount of vacancy defects which are caused by displacement effect, and this damage mechanism has gained wide consensus. [18] The reliability research of III-V devices about proton irradiation rarely involves anti-radiation device structure and technology techniques.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane*

et al. 2020

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An anti-radiation structure of InP-based high electron mobility transistor (HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotion in channel current, transconductance, current gain cut-off frequency, and maximum oscillation frequency of InP-based HEMTs. Moreover, direct current (DC) and radio frequency (RF) characteristic properties and their reduction rates have been compared in detail between single Si-doped and double Si-doped structures after 75-keV proton irradiation with dose of 5 × 1011 cm−2, 1 × 1012 cm−2, and 5 × 1012 cm−2. DC and RF characteristics for both structures are observed to decrease gradually as irradiation dose rises, which particularly show a drastic drop at dose of 5 × 1012 cm−2. Besides, characteristic degradation degree of the double Si-doped structure is significantly lower than that of the single Si-doped structure, especially at large proton irradiation dose. The enhancement of proton radiation tolerance by the insertion of another Si-doped plane could be accounted for the tremendously increased native carriers, which are bound to weaken substantially the carrier removal effect by irradiation-induced defects.

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“…Considering high technology maturity, low fabrication cost and broad applications, research about proton irradiation effect and hardness techniques chiefly focus on Sibased complementary metal-oxide-semiconductor transistor (CMOS) and silicon-on-insulator (SOI) devices. [11,12] Admittedly, some exploratory studies have been reported to aim at proton irradiation effect on various devices with III-V materials, [13,14] and the incident direction of proton particles is almost without exception perpendicular to the device surface for both simulations and experiments. However, few studies address the effects of proton irradiation from different orientations on InP-based HEMTs, which are in accordance with actual space radiation situation.…”

Section: Introductionmentioning

confidence: 99%

Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs

et al. 2018

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InP-based high electron mobility transistors (HEMTs) will be affected by protons from different directions in space radiation applications. The proton irradiation effects on InAlAs/InGaAs hetero-junction structures of InP-based HEMTs are studied at incident angles ranging from 0 to 89.9 • by SRIM software. With the increase of proton incident angle, the change trend of induced vacancy defects in the InAlAs/InGaAs hetero-junction region is consistent with the vacancy energy loss trend of incident protons. Namely, they both have shown an initial increase, followed by a decrease after incident angle has reached 30 • . Besides, the average range and ultimate stopping positions of incident protons shift gradually from buffer layer to hetero-junction region, and then go up to gate metal. Finally, the electrical characteristics of InP-based HEMTs are investigated after proton irradiation at different incident angles by Sentaurus-TCAD. The induced vacancy defects are considered self-consistently through solving Poisson's and current continuity equations. Consequently, the extrinsic transconductance, pinch-off voltage and channel current demonstrate the most serious degradation at the incident angle of 30 • , which can be accounted for the most severe carrier sheet density reduction under this condition.

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The fine structure of electron irradiation induced EL2-like defects in n-GaAs

Cited by 12 publications

References 44 publications

Point-defect-induced colossal dielectric behavior in GaAs single crystals

Point-defect-induced colossal dielectric behavior in GaAs single crystals

Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane*

Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs

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