Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane*

Abstract

An anti-radiation structure of InP-based high electron mobility transistor (HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotion in channel current, transconductance, current gain cut-off frequency, and maximum oscillation frequency of InP-based HEMTs. Moreover, direct current (DC) and radio frequency (RF) characteristic properties and their reduction rates have been compared in detail between single Si-doped and double Si-doped structures after 75-keV proton irradiation with dose of 5 × 1011 cm−2, 1 × 1012 cm−2, and 5 × 1012 cm−2. DC and RF characteristics for both structures are observed to decrease gradually as irradiation dose rises, which particularly show a drastic drop at dose of 5 × 1012 cm−2. Besides, characteristic degradation degree of the double Si-doped structure is significantly lower than that of the single Si-doped structure, especially at large proton irradiation dose. The enhancement of proton radiation tolerance by the insertion of another Si-doped plane could be accounted for the tremendously increased native carriers, which are bound to weaken substantially the carrier removal effect by irradiation-induced defects.

Effect of InxAl1-xAs graded buffer materials on pseudomorphic InP HEMT

“…contents were designed. The design is because 64% of the indium contents has a large mismatch with InP substrate and 70% of the indium is almost the highest contents with a good 2-deg properties in reported previously(Ajayan and Nirmal, 2015;Zhong et al, 2020).…”

“…From the material perspective, the most effective and the simplest way to improve the performance of HEMT materials is to increase the channel indium components. Because its results in reduced the width of the band gap and enhanced mobility of electrons in the channel (Takahashi et al, 2008;Ajayan and Nirmal, 2015;Shi et al, 2015;Tong et al, 2020;Zhong et al, 2020;Feng et al, 2022). However, the lattice mismatch between the pseudomorphic In y Ga 1-y As channel and the InAlAs buffer will occur.…”

A comparative study on radiation reliability of composite channel InP high electron mobility transistors*

“…[23,24] Moreover, the trap model is employed to introduce the radiation damage into device simulation. And the self-consistent coupling of Poisson equation, current continuity equations, current density equations are given as follows: [25] ∇ 2 ϕ = − q…”

Untitled

“…Because of high carrier sheet density, high carrier peak drift velocity and low-field mobility in InGaAs channel, InAlAs/InGaAs InP-based high electron mobility transistors (HEMTs) demonstrate extremely excellent characteristics, such as high frequency, low noise figure, and superior gain performance and so on. Consequently, they have become competitive candidates for various millimeter-wave circuits [7][8][9][10] and space applications.…”