InP layers grown on Si (001) were achieved by the two-step growth method using gas source molecular beam epitaxy. The effects of growth temperature of nucleation layer on InP/Si epitaxial growth were investigated systematically. Cross-section morphology, surface morphology and crystal quality were characterized by scanning electron microscope images, atomic force microscopy images, high-resolution X-ray diffraction (XRD), rocking curves and reciprocal space maps. The InP/Si interface and surface became smoother and the XRD peak intensity was stronger with the nucleation layer grown at 350 °C. The Results show that the growth temperature of InP nucleation layer can significantly affect the growth process of InP film, and the optimal temperature of InP nucleation layer is required to realize a high-quality wafer-level InP layers on Si (001).

The effects of growth condition on material quality of quinary alloy InGaAsPBi grown by gas source molecular beam epitaxy (GSMBE) were investigated systematically. It is found that 0.1% of Bi incorporation can play the role of surfactant effects and is beneficial to improve the material quality. The roughness of surface RMS measured by atomic force microscope (AFM) is 0.218 nm. Furthermore, the addition of a small amount of bismuth atoms promotes the binding of phosphorus atoms to group III atmos.

In this paper, The InxAl1-xAs graded buffer was inserted between the InAlAs buffer layer and the pseudomorphic In0.66Ga0.34As channel layer to improve material quality in channel. The results show that the InxAl1-xAs graded buffer layer with 50 nm thickness can obtain a good heterojunction interface and the root mean square (RMS) of 0.154 nm. The two dimensional electron gas (2-deg) mobility and concentration were 8570 cm2/Vs. and 2.7 cm−2 × 1012 cm−2 at 300K, respectively. InxAl1-xAs graded buffer layer can enhance the interface quality and the electrical performance through releasing the interface strain caused by pseudomorphic In0.52Al0.48As/In0.66Ga0.34As HEMT. This study shows great potentials by incorporating InxAl1-xAs graded buffer layer in pseudomorphic InP HEMT materials to improve the properties of devices.