2017
DOI: 10.12693/aphyspola.131.1426
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Effects of Elastic Coupling between BaTiO3 Ferroelectric Film and a Substrate with Finite Thickness on Piezoelectric Coefficients

Abstract: The effective piezoelectric coefficients of BaTiO3 ferroelectric films epitaxially grown on different single crystal substrates with finite thickness have been theoretically analyzed. The effective longitudinal converse piezoelectric coefficients d33 of film and "film-substrate" heterostructure all monotonously increased with increase of the film thickness fraction k, and the latter is always larger than the former at the range of 0 < k < 1. Meanwhile, we also found that the effective piezoelectric coefficient… Show more

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Cited by 3 publications
(5 citation statements)
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“…As mentioned earlier, the analysis relies on the assumption that the thin piezoactive film is unclamped, and that the fractional change in capacitance (≈ Δ c π / c π 0 ) is due to the change in physical dimensions of the device ( R 0 & h 0 ) and is independent of the dielectric constant ( κ normalr ), as suggested by Equation (). [ 26,39 ] The in‐plane dimensions of the actual device are much larger than the total stack thickness ( R 0 h 0 ), which avoids edge effects [ 5,40 ] visible in simulations on small scale ( Figure b inset). Further, in the case of submicrometer dimensions, the thin film is always clamped to the substrate via van der Waals forces [ 41 ] ; thus, the assumption σ = 0 is invalid.…”
Section: Discussionmentioning
confidence: 99%
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“…As mentioned earlier, the analysis relies on the assumption that the thin piezoactive film is unclamped, and that the fractional change in capacitance (≈ Δ c π / c π 0 ) is due to the change in physical dimensions of the device ( R 0 & h 0 ) and is independent of the dielectric constant ( κ normalr ), as suggested by Equation (). [ 26,39 ] The in‐plane dimensions of the actual device are much larger than the total stack thickness ( R 0 h 0 ), which avoids edge effects [ 5,40 ] visible in simulations on small scale ( Figure b inset). Further, in the case of submicrometer dimensions, the thin film is always clamped to the substrate via van der Waals forces [ 41 ] ; thus, the assumption σ = 0 is invalid.…”
Section: Discussionmentioning
confidence: 99%
“…[4] A precise measurement of these matrix elements in thin-film form is thus expected to be instrumental in developing advanced, cost-effective, and high-performing material systems and harvester designs. [5] Methods such as Berlincourt, [6] laser Doppler vibrometry (LDV), [7] double-beam interferometry, [8] and piezoresponse force microscopy (PFM) [9] have been standard methods of piezoelectric coefficient characterization. Issues such as substrate bending, [10,11] elastic coupling, [5] electrostatic artifacts between cantilever and substrate, [11,12] top electrode size effects, [13,14] large leakage currents, [15] concentrated inhomogeneous electric fields, [16] and local poling [17] complicate precise measurements.…”
Section: Introductionmentioning
confidence: 99%
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“…Lefki and Dormans derived the solution [ 38 ] for the case of the tetragonal (001) oriented ferroelectric materials bonded to the rigid substrate, as it is imperative to the interpretation of the Doppler vibrometer and laser interferometry data [ 39 , 40 , 41 ]. More complicated cases considering the flexible substrate contribution, top electrode lateral size, and multilayered structure were studied using sophisticated analytical models and finite element simulations [ 41 , 42 , 43 , 44 , 45 , 46 , 47 ].…”
Section: Introductionmentioning
confidence: 99%