Effects of electromagnetic radiation exposure on direct Cu bonding

Song, Jenn‐Ming; Liang, Sin-Yong; Chiang, Po-Hao; Huang, Shang-Kun; Chiu, Ying-Ta; Tarng, David; Hung, Chih-Pin

doi:10.23919/ltb-3d.2017.7947439

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2019

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“…Several approaches have been developed to facilitate Cu direct bonding, including surface-activated bonding (SAB) and thermal compression bonding. 3) Other notable treatments can also improve bonding quality, such as ultrasonic bonding, 4) concave-convex structures, 5) light-enhanced bonding, 6,7) residual-stress control 8) and graphene layers. 9) The SAB process bonds two very smooth and clean Cu surfaces post Ar atom beam bombardment at room temperature in ultrahigh vacuum (UHV).…”

Section: Introductionmentioning

confidence: 99%

Instant Cu-to-Cu direct bonding enabled by 〈111〉-oriented nanotwinned Cu bumps

Shie

Juang

Chen

2019

Jpn. J. Appl. Phys.

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Cu-to-Cu direct bonding was successfully achieved in 10 s with 〈111〉-oriented nanotwinned Cu (nt-Cu) bumps in ambient N 2 . The bonding temperature and pressure were 300 °C and 90 MPa, respectively. A nearly void-free interface and a low bump resistance of 4.9 mΩ can be observed after a short-time bonding process. Besides, longer bonding times of 60 s and 30 s were employed, but the resistances of the Cu joints did not decrease significantly when the bonding time increased to 60 s. However, the nt-Cu columnar grains started to recrystallize during the 60 s bonding and started detwinning in 10 s bonding. Yet, the bonding interface remained under such a short bonding time.

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