Cu-to-Cu direct bonding is one of the key technologies for three-dimensional (3D) chip stacking. This research proposes a new concept to enhance Cu-to-Cu direct bonding through the control of surface physical properties. A linear relationship between bonding strength and the value of the bonding face (H: subsurface hardness, R: surface roughness) was found. Low vacuum air plasma and thermal annealing were adopted to adjust the surface physical conditions. Instead of surface activation, an acceleration in copper atom diffusion due to plasma-induced compressive stress accounts for the improvement in bonding strength.

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