Effects of electron-irradiation on electrical properties of AlGaN/GaN Schottky barrier diodes

Fang, Z-Q.; Farlow, G. C.; Claflin, B.; Look, David C.; Green, D. S.

doi:10.1063/1.3151952

Cited by 23 publications

(14 citation statements)

References 13 publications

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“…A shift in V th to a more negative value has been reported for the AlGaN/ GaN SBDs after 1 MeV electron-irradiation ͑EI͒, which is attributed to the EI-induced shallow traps. 9 FIG. 1.…”

Section: Resultsmentioning

confidence: 99%

“…3 Activation energy of 0.9 eV for trap A x was found in AlGaN/GaN SBDs studied recently in our laboratory. 9 AlGaN/GaN SBDs as well. 9 Since two traps, trap E ͑0.16 eV, related to the N-vacancy͒ and trap A 2 , were simultaneously induced by the EI, A 2 was tentatively identified as the corresponding N-interstitial.…”

Section: Figmentioning

confidence: 99%

“…9 AlGaN/GaN SBDs as well. 9 Since two traps, trap E ͑0.16 eV, related to the N-vacancy͒ and trap A 2 , were simultaneously induced by the EI, A 2 was tentatively identified as the corresponding N-interstitial. Activation energy for traps A 3 and H 2 cannot be accurately determined.…”

Section: Figmentioning

confidence: 99%

“…Actually, A x was also reported to be related to extended defects in a previous study. 9 Unfortunately, nothing can be judged for trap A 3 , since its peak is pulled down with increasing t p , due to an increase in negatively going signal for the holelike trap H 2 . Thus, in the two SBDs, almost all of observed traps, which are believed to be related to either point defects ͑e.g., N-interstitials͒ or impurities ͑e.g., carbon͒, are evidently associated with extended defects, such as threading dislocations.…”

Section: Figmentioning

confidence: 99%

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Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers

Fang

Claflin

Look

et al. 2010

Journal of Applied Physics

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102

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Electrical properties, including leakage currents, threshold voltages, and deep traps, of AlGaN/GaN heterostructure wafers with different concentrations of carbon in the GaN buffer layer, have been investigated by temperature dependent current-voltage and capacitance-voltage measurements and deep level transient spectroscopy ͑DLTS͒, using Schottky barrier diodes ͑SBDs͒. It is found that ͑i͒ SBDs fabricated on the wafers with GaN buffer layers containing a low concentration of carbon ͑low-͓C͔ SBD͒ or a high concentration of carbon ͑high-͓C͔ SBD͒ have similar low leakage currents even at 500 K; and ͑ii͒ the low-͓C͔ SBD exhibits a larger ͑negative͒ threshold voltage than the high-͓C͔ SBD. Detailed DLTS measurements on the two SBDs show that ͑i͒ different trap species are seen in the two SBDs: electron traps A x ͑0.9 eV͒, A 1 ͑0.99 eV͒, and A 2 ͑1.2 eV͒, and a holelike trap H 1 ͑1.24 eV͒ in the low-͓C͔ SBD; and electron traps A 1 , A 2 , and A 3 ͑ϳ1.3 eV͒, and a holelike trap H 2 ͑Ͼ1.3 eV͒ in the high-͓C͔ SBD; ͑ii͒ for both SDBs, in the region close to GaN buffer layer, only electron traps can be detected, while in the AlGaN/GaN interface region, significant holelike traps appear; and iii͒ all of the deep traps show a strong dependence of the DLTS signal on filling pulse width, which indicates they are associated with extended defects, such as threading dislocations. However, the overall density of electron traps is lower in the low-͓C͔ SBD than in the high-͓C͔ SBD. The different traps observed in the two SBDs are thought to be mainly related to differences in microstructure ͑grain size and threading dislocation density͒ of GaN buffer layers grown at different pressures.

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“…A shift in V th to a more negative value has been reported for the AlGaN/ GaN SBDs after 1 MeV electron-irradiation ͑EI͒, which is attributed to the EI-induced shallow traps. 9 FIG. 1.…”

Section: Resultsmentioning

confidence: 99%

Section: Figmentioning

confidence: 99%

Section: Figmentioning

confidence: 99%

Section: Figmentioning

confidence: 99%

See 2 more Smart Citations

Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers

Fang

Claflin

Look

et al. 2010

Journal of Applied Physics

Self Cite

102

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show abstract

“…Although discovering the cause of the negative threshold voltage shift in Fig. 3 was not an objective of this study, a possible explanation is a trapping phenomenon near the gate [10], [11]. The transfer and transconductance curves of Fig.…”

Section: Experiments Descriptionmentioning

confidence: 96%

Reliability testing of AlGaN/GaN HEMTs under multiple stressors

Christiansen

Coutu

Heller

et al. 2011

2011 International Reliability Physics Symposium

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We performed an experiment on AlGaN/GaN HEMTs with high voltage and high power as stressors. We found that devices tested under high power generally degraded more than those tested under high voltage. In particular, the high-voltagetested devices did not degrade significantly as suggested by some papers in the literature. The same papers in the literature also suggest that high voltages cause cracks and pits. However, the high-voltage-tested devices in this study do not exhibit cracks or pits in TEM images, while the high-power-tested devices exhibit pits.

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Defects and Reliability of GaN‐Based LEDs: Review and Perspectives

Buffolo

Caria

Piva

et al. 2022

Physica Status Solidi (a)

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Herein, the main factors and mechanisms that limit the reliability of gallium nitride (GaN)-based light-emitting diodes (LEDs) are reviewed. An overview of the defects characterization techniques most relevant for wide-bandgap diodes is provided first. Then, by introducing a catalogue of traps and deep levels in GaN and computer-aided simulations, it is shown which types of defects are more detrimental for the radiative efficiency of the devices. Gradual degradation mechanisms are analyzed in terms of their specific driving force: a separate analysis of recombination-enhanced processes, driven by nonradiative recombination and/or temperature-assisted processes, such as defects or impurity diffusion, is presented. The most common lifetime estimation methods and standards adopted for solid-state luminaires are also reported on. Finally, the paper concludes by examining which are the typical degradation and failure mechanisms exhibited by LEDs submitted to electrical overstress.

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Effects of electron-irradiation on electrical properties of AlGaN/GaN Schottky barrier diodes

Cited by 23 publications

References 13 publications

Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers

Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers

Reliability testing of AlGaN/GaN HEMTs under multiple stressors

Defects and Reliability of GaN‐Based LEDs: Review and Perspectives

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