In this paper, we propose a near-infrared p-type β -FeSi 2 /n-type 4H-SiC heterojunction photodetector with semiconducting silicide (β -FeSi 2 ) as the active region for the first time. The optoelectronic characteristics of the photodetector are simulated using a commercial simulator at room temperature. The results show that the photodetector has a good rectifying character and a good response to near-infrared light. Interface states should be minimized to obtain a lower reverse leakage current. The response spectrum of the β -FeSi 2 /4H-SiC detector, which consists of a p-type β -FeSi 2 absorption layer with a doping concentration of 1 × 10 15 cm −3 and a thickness of 2.5 µm, has a peak of 755 mA/W at 1.42 µm. The illumination of the SiC side obtains a higher responsivity than that of the β -FeSi 2 side. The results illustrate that the β -FeSi 2 /4H-SiC heterojunction can be used as a near-infrared photodetector compatible with near-infrared optically-activated SiC-based power switching devices.