Effects of ferroelectric polarization switching on the electronic transport and magnetic properties of La0.8Ce0.2MnO3 epitaxial thin films

The electric-field-tunable non-volatile resistivity and ferromagnetism switching in the (La0.5Pr0.5)0.67Ca0.33MnO3 films grown on (111)-oriented 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 ferroelectric single-crystal substrates have been investigated. By combining the 180° ferroelectric domain switching and in situ X-ray diffraction and resistivity measurements, we identify that this voltage control of order parameters stems from the domain switching-induced accumulation/depletion of charge carriers at the interface rather than induced lattice strain effect. In particular, the polarization-induced charge effect (i.e., ferroelectric field effect) is strongly dependent on the magnetic field. This, together with the charge-modulated magnetoresistance and magnetization, reveals the strong correlation between the electric charge and the magnetic field. Further, we found that this coupling is essentially driven by the electronic phase separation, the relative strength of which could be determined by recording charge-tunability of resistivity [(Δρ/ρ)charge] under various magnetic fields. These findings present a potential strategy for elucidating essential physics of perovskite manganites and delivering prototype electronic devices for non-volatile information storage.

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Progresses of magnetoelectric composite films based on PbMg1/3Nb2/3O3-PbTiO3 single-crystal substrates

Meng¹,

Yan²,

Xu³

et al. 2018

Acta Phys. Sin.

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Owing to the rapid development of microelectronic technology,higher requirements are raised for miniaturization, intellectualization,sensitivity,reliability,low-power consumption and versatile functions of electromagnetic functional devices,but conventional block magnetic or electrical functional materials cannot meet those requirements mentioned above any longer.Layered magnetoelectric composites,by contrast,have ferroelectric,ferromagnetic and magnetoelectric properties,so they are possible to satisfy these demands above and be applied to the next-generation magnetoelectric functional devices.Layered magnetoelectric composites not only have rich physical phenomena and effects,but also possess broad application prospects in weak magnetic field detectors,multi-state memories,electric-write/magnetic-read memories,electrically tunable filters,phase shifters,antennas,etc,which have attracted extensive attention of material scientists and physicists.Among layered magnetoelectric composites,the functional thin film/ferroelectric single crystal heterostructures have aroused increasingly interest due to their simple preparation method,flexible structural design,effective electric field control and low power consumption.Currently,because of the excellent ferroelectric and piezoelectric properties of the (1 -x) PbMg1/3Nb2/3O3-xPbTiO3(PMN-PT) single crystal,the functional thin film/PMN-PT single crystal heterostructure has become one of the hot research topics in the multiferroic composite thin film material field.On this research topic,Chinese scientists have made their own significant contributions to the research of functional thin film/PMN-PT single crystal heterojunction.So far,researchers have built multiple types of thin film/PMN-PT heterostructures,such as manganese oxide/PMN-PT,ferrite/PMN-PT,ferromagnetic metal/PMN-PT,dilute magnetic semiconductor/PMN-PT,luminescent material/PMN-PT,two-dimensional material/PMN-PT,multi-layer film/PMN-PT,superconductive material/PMN-PT,etc.,and they have made great achievements in both theoretical and experimental studies.In this review,we summarize the research progress of magnetoelectric composite thin films based on PMN-PT single crystal substrates in the last decade.We first briefly describe the current status of articles related to functional film/PMN-PT heterostructures.Then we introduce the phase diagram and electric-field-induced strain properties of the PMN-PT single crystal around the morphotropic phase boundary.We also classify the heterostructures according to different categories of functional thin film materials and discuss the representative research findings of each category in the past few years.Our discussion focuses on the magnetoelectric properties of materials and the intrinsic physical mechanism.Finally,we also discuss the scientific problems to be solved and predict the possible application directions in the future.

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Effects of ferroelectric polarization switching on the electronic transport and magnetic properties of La0.8Ce0.2MnO3 epitaxial thin films

Cited by 3 publications

References 30 publications

Effect of ferroelectric polarization switching on the electronic transport properties of La 0.8 Ca 0.2 MnO 3 film

Effect of ferroelectric polarization switching on the electronic transport properties of La 0.8 Ca 0.2 MnO 3 film

Coupling of electric charge and magnetic field via electronic phase separation in (La,Pr,Ca)MnO3/Pb(Mg1/3Nb2/3)O3-PbTiO3 multiferroic heterostructures

Progresses of magnetoelectric composite films based on PbMg1/3Nb2/3O3-PbTiO3 single-crystal substrates

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