2007
DOI: 10.1016/j.mseb.2006.11.029
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Effects of film thickness on microstructure and electrical properties of the pyrite films

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Cited by 38 publications
(24 citation statements)
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“…Secondly thick films with fewer grain boundaries and large grain size deteriorate the confinement of charge carriers by grain boundaries and results the higher carrier density and Hall mobility. The effect of film thickness on the lattice distortion can be determined by measuring lattice distortion degree given by equation : trueδ=4pta-4ptaoao …”
Section: Pyrite Thin Films For Photovoltaicsmentioning
confidence: 99%
“…Secondly thick films with fewer grain boundaries and large grain size deteriorate the confinement of charge carriers by grain boundaries and results the higher carrier density and Hall mobility. The effect of film thickness on the lattice distortion can be determined by measuring lattice distortion degree given by equation : trueδ=4pta-4ptaoao …”
Section: Pyrite Thin Films For Photovoltaicsmentioning
confidence: 99%
“…4(c)) might be a good agreement for the high conductivity of a-C:B film. Variations in film thickness can influence the conductivity because of the relation between carrier concentration and the grain size of fil [15,16]. Negative bias has a significant function in attracting positive B ions for incorporation with a-C film, thereby generating excess holes in a-C:B films.…”
Section: Resultsmentioning
confidence: 99%
“…For the pure undoped a-C, the conductivity (σ) was calculated and the highest conductivity was 9.4×10 -2 Scm -1 at 600℃, trical properties can be produced theoretically from the density changes of the crystal defects, such as the vacancy, grain boundary and film surface, which in turns, can also be directly related to the carrier concentration and mobility of the electron at different thickness of thin films [19]. The samples deposited under nitrogen gas as the dopant/carrier gas exhibit larger conductivity due to the fact that nitrogen gas as the dopant gas for the a-C can tune the conductivity of pure a-C from p-type into n-type material.…”
Section: Resultsmentioning
confidence: 99%
“…The carrier concentration and carrier mobility was reported as the important reason in conductivity variation [22]. As the thickness increase, the carrier concentration and carrier mobility will increase [19]. Other than that, a-C conductivity is also attributed to the presence of π* (sp 2 graphitic bonding) and σ* (sp 2 and sp 3 diamond bonding).…”
Section: Resultsmentioning
confidence: 99%