2013
DOI: 10.4028/www.scientific.net/amr.721.194
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Effects of Film Thickness on Resistive Switching Characteristics of ZnO Based ReRAM

Abstract: ZnO thin films were deposited on heavily doped silicon wafer by DC magnetron sputtering and the Cu electrodes were evaporated on ZnO/ n+-Si by electric beam evaporation to get Cu/ZnO/n+-Si resistive random access memory (ReRAM). The forming, reset and set processes of the devices were investigated using filamentary model. The effects of film thickness on the crystalline structure of the ZnO thin films and the resistive switching characteristics of the fabricated devices were investigated. The diffraction peak … Show more

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Cited by 5 publications
(2 citation statements)
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“…However, the switching characteristics became stable after a few cycles and it was observed that switching voltage did not change as predicted, showing weak dependence on film thickness. Xi et al [14] also investigated the influence of film thickness on RS characteristics, which obtained the same results with ours in crystal structures and electronic properties. After dozens of switches, it was discovered that the RS behavior of the 5-nm-thick sample was unstable and would go through breakdown easily.…”
supporting
confidence: 77%
See 1 more Smart Citation
“…However, the switching characteristics became stable after a few cycles and it was observed that switching voltage did not change as predicted, showing weak dependence on film thickness. Xi et al [14] also investigated the influence of film thickness on RS characteristics, which obtained the same results with ours in crystal structures and electronic properties. After dozens of switches, it was discovered that the RS behavior of the 5-nm-thick sample was unstable and would go through breakdown easily.…”
supporting
confidence: 77%
“…3(a). The high FV may cause hard breakdown and large leakage current in the film during the forming process, [14] which was detrimental to device properties. At the same time, the reset process was unstable with large noisy and distributed randomly.…”
mentioning
confidence: 99%