ZnO thin films were deposited on heavily doped silicon wafer by DC magnetron sputtering and the Cu electrodes were evaporated on ZnO/ n+-Si by electric beam evaporation to get Cu/ZnO/n+-Si resistive random access memory (ReRAM). The forming, reset and set processes of the devices were investigated using filamentary model. The effects of film thickness on the crystalline structure of the ZnO thin films and the resistive switching characteristics of the fabricated devices were investigated. The diffraction peak intensity and crystal size increased with increasing film thickness, which shows better crystallization. Cu/ZnO/n+-Si structured device exhibits reversible and steady unipolar resistive switching behaviors. The film thickness had great effect on the forming process of the prepared devices, while the values of Vset increased and Vreset varied little with increasing the film thickness.

In this paper, ZnO thin films were prepared on ITO conductive glass by direct current magnetron sputtering and the Cu electrodes were evaporated on ZnO/ITO by electric beam evaporation to get transparent Cu/ZnO/ITO resistive random access memory. The crystal structure and surface morphology were investigated by X-ray diffraction and atomic force microscopy, respectively. The transmittance spectra of ZnO/ITO in the visible region were measured by UV-VIS spectroscopy. The resistive switching characteristics of the fabricated devices were investigated by the voltage sweeping method, which showed that the transparent Cu/ZnO/ITO device had good resistive switching characteristics.

In this paper, resistance switching devices with Au/SnO2/Al sandwich structure were fabricated. The prepared devices showed a reliable unipolar resistance switching characteristic. The forming voltage of SnO2-based resistance devices increased with increasing film thicknesses, while SnO2film thickness had little influence on set and reset voltages. When the SnO2film thickness was 46 nm, the device showed steady and reliable conversion under voltage sweeping and the ratio between high and low resistance states was higher than 102, which can basically satisfy the requirements for practical application.

LIBS of aluminum under the ambient pressure from 1 atm to 10 Pa were implemented. Results showed that the temperature of plasma increased with the decreased pressure and leaded to the raise of density of Al II, decrease of density of Al I. Furthermore, in order to understand the influence of air flow to quantification of LIBS an alloy of aluminum and silicon was measured by LIBS under different level wind. Results showed the ratio of Si I/Al I which is important in quantitative analysis changed with wind despite the pressure change a little. Therefore, the ambient atmosphere must be steady enough in order to improve the accuracy in quantitative analysis of LIBS.