Study on Preparation and Resistive Switching Characteristics of SnO₂ Films

Abstract

In this paper, resistance switching devices with Au/SnO2/Al sandwich structure were fabricated. The prepared devices showed a reliable unipolar resistance switching characteristic. The forming voltage of SnO2-based resistance devices increased with increasing film thicknesses, while SnO2film thickness had little influence on set and reset voltages. When the SnO2film thickness was 46 nm, the device showed steady and reliable conversion under voltage sweeping and the ratio between high and low resistance states was higher than 102, which can basically satisfy the requirements for practical application.