Effects of Ga+ milling on InGaAsP quantum well laser with mirrors milled by focused ion beam

Vallini, Felipe; Figueira, David S. L.; Jarschel, Paulo F.; Barea, Luis A. M.; Zuben, Antonio A. G. von; Filho, A. S.; Frateschi, Newton C.

doi:10.1116/1.3207741

Cited by 20 publications

(16 citation statements)

References 17 publications

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“…Postmilling annealing has been proposed for reducing these damages. [17][18][19] We are investigating the use of annealing to improve the performance of our resonator. This study is ongoing.…”

Section: Characterizationmentioning

confidence: 99%

Low-roughness active microdisk resonators fabricated by focused ion beam

Barea

Vallini

Vaz

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The authors present a new approach for the fabrication of active microdisk resonators using focused ion beam (FIB) followed by selective wet-chemical etching. This efficient technique enables the placement of the devices at any region of a sample and facilitates prototyping of monolithical integration. Also, it allows the production of very smooth walls required by the resonators. High-quality resonators with an active region based on high-gain InGaAsP∕InP quantum wells are demonstrated using this technique. Emission in the C-band at whispering-gallery modes is observed.

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Section: Characterizationmentioning

confidence: 99%

Low-roughness active microdisk resonators fabricated by focused ion beam

Barea

Vallini

Vaz

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Gallium was used as the ion source. This technique has been shown to be an extraordinary tool for quick prototyping of devices with very good morphology [39]. Moreover, it is also very suitable for the fabrication of the photonic crystals because it allows the placement of the membrane anywhere in the sample, facilitating their monolithic integration with other optoelectronic devices.…”

Section: Fabrication Of the Structurementioning

confidence: 99%

a-SiO_x<Er> active photonic crystal resonator membrane fabricated by focused Ga^+ ion beam

Figueira¹,

Barea²,

Vallini³

et al. 2012

Opt. Express

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We have fabricated thin erbium-doped amorphous silicon sub-oxide (a-SiOx) photonic crystal membrane using focused gallium ion beam (FIB). The photonic crystal is composed of a hexagonal lattice with a H1 defect supporting two quasi-doubly degenerate second order dipole states. 2-D simulation was used for the design of the structure and full 3-D FDTD (Finite-Difference Time-Domain) numerical simulations were performed for a complete analysis of the structure. The simulation predicted a quality factor for the structure of Q = 350 with a spontaneous emission enhancement of 7. Micro photoluminescence measurements showed an integrated emission intensity enhancement of ~2 times with a Q = 130. We show that the discrepancy between simulation and measurement is due to the conical shape of the photonic crystal holes and the optical losses induced by FIB milling.

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“…Attempts to avoid the formation of the III-material-rich droplets have been made by milling at cryogenic temperatures but without success [22]. After the FIB milling it is possible to partially recover the samples by thermal annealing, usually performed at temperatures ranging from 200 °C to 600 °C [13].…”

Section: Introductionmentioning

confidence: 99%

“…The same tool allows imaging [4,5], (gas assisted) milling [3][4][5][8][9][10][11][12][13][14][15][16][17][18][19], gas assisted deposition [3,15] and implantation [7] of a selected sample. Moreover, a wide range of materials such as semiconductors [8,10,17,19], metals [3,6,9], soft materials [4,5] and insulators [7,11,12,18] can be processed by FIB.…”

Section: Introductionmentioning

confidence: 99%

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Focused ion beam milling of gallium phosphide nanostructures for photonic applications

Luca¹,

Sanatinia²,

Anand³

et al. 2016

Opt. Mater. Express

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Abstract:We report on the fabrication of gallium phosphide (GaP) nanowaveguides of controlled dimensions, as small as 0.03 μm and aspect ratio in excess of 20, using focused ion beam (FIB) milling. A known limitation of this fabrication process for photonic applications is the formation of gallium droplets on the surface. We demonstrate a postfabrication step using a pulsed laser to locally oxidize the excess surface gallium on the FIB milled nanostructures. The process significantly reduces the waveguide losses. The surface optical quality of the fabricated GaP nanowaveguides has been evaluated by second-harmonic generation experiments. Surface and bulk contributions to second-order optical nonlinearities have been identified by polarization measurements. The presented method can potentially be applied to other III-V nanostructures to reduce optical losses.

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Effects of Ga+ milling on InGaAsP quantum well laser with mirrors milled by focused ion beam

Cited by 20 publications

References 17 publications

Low-roughness active microdisk resonators fabricated by focused ion beam

Low-roughness active microdisk resonators fabricated by focused ion beam

a-SiO_x<Er> active photonic crystal resonator membrane fabricated by focused Ga^+ ion beam

Focused ion beam milling of gallium phosphide nanostructures for photonic applications

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