Effects of gas environment on electronic and optical properties of amorphous indium zinc tin oxide thin films

Denny, Yus Rama; Lee, Sun young; Lee, Kang Il; Seo, S. J.; Oh, Suhk Kun; Kang, Hee Jae; Heo, Sung; Chung, Jae Yoon; Lee, Jae Cheol; Tougaard, S.

doi:10.1116/1.4801023

Cited by 10 publications

(2 citation statements)

References 33 publications

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“…The bandgap was determined from the UV spectroscopic measurements by using the Tauc relation [11] (which is valid only for amorphous thin films). The optical band gaps were calculated on the basis of the optical spectral absorption and they can be determined by extrapolating the best fit line between (αhυ) 2 and hυ, where α, h, and υ are the absorption coefficient, the Planck's constant (6.626 x 10 -34 m 2 kg/s), and the frequency of incident photons, respectively [12]. The results showed in Figure 6 and tabulated in Table 1.…”

Section: Resultsmentioning

confidence: 99%

Effect of Precursor Concentration and Annealed Substrate Temperature on the Crystal Structure, Electronic and Optical Properties of ZnO thin film

Denny

Trenggono

Wijaya

et al. 2020

J. Pure App. Chem Res

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This study carried out on the effect of precursor concentration and annealed substrate temperature on the crystal structure, electronic and optical properties of ZnO thin film. An aqueous solution of Acid Nitrite was used as precursors and its concentration was varied from 0.1 M to 0.4 M. The ZnO thin film was deposited on the glass substrate by Spray Pyrolysis Deposition and annealed with different temperature from 300 oC to 600 oC. The crystal structure, electronic and optical properties were investigated by Scanning Electron Microscopy (SEM), X-ray diffraction (XRD) and UV-Spectrometer. XRD result showed that all thin films have amorphous hexagonal wurtzite crystalline. Particle sizes ranging from 21.83 to 43.67 nm were calculated through Debye-Scherer Method. It showed that the concentration of the precursor had slightly impact on the particle size. Meanwhile, the increase in particle size with increasing annealed temperature is found to be gradual. The average transparent of all thin film was more than 80%. The bandgap of the ZnO thin films was estimated by Tauc Plot Relation. It showed that the bandgap values were increased with the increasing of precursor concentration due to Burstein-Moss Effect. In addition, the decrease in band gap values was found with increasing annealed temperature. Our results demonstrated that the varying precursor concentration and annealed substrate temperature can enhance the structure, electronic and the optical properties of ZnO thin films.

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Section: Resultsmentioning

confidence: 99%

Effect of Precursor Concentration and Annealed Substrate Temperature on the Crystal Structure, Electronic and Optical Properties of ZnO thin film

Denny

Trenggono

Wijaya

et al. 2020

J. Pure App. Chem Res

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“…In comparison to a-IGZO TFTs, a-indium zinc tin oxide (IZTO) TFTs are a promising alternative for industrial application because of higher mobility [5,6]. It is reported that a-IZTO TFTs can achieve a tenfold increase in carrier mobility compared to a-IGZO TFTs and a high on/off ratio (>10 5 ) at a low annealing temperature [7,8]. Moreover, gallium (Ga) is known as a doping element that can modulate the electrical properties of an ntype oxide semiconductor [9].…”

Section: Introductionmentioning

confidence: 99%

Influence of oxygen flow during sputtering process on the electrical properties of Ga-doped InZnSnO thin film transistor

Yang¹,

Su²,

Zhang³

2021

Semicond. Sci. Technol.

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This work presents the electrical properties of amorphous gallium-doped indium zinc tin oxide (Ga-IZTO) thin film transistors (TFTs), as a function of O2 flow rate (Ar/O2), during the sputtering process of the channel layer. As the O2 flow rate increased from 30:0 to 30:7, the saturation mobility ( μ SAT) monotonically degraded from 31.5 cm2V−1s−1 to 12.0 cm2V−1s−1, the threshold voltage (V TH) shifted from 0.8 V to 6.8 V, and the V TH shift (ΔV TH) induced by the negative bias stress improved from −7.0 V to −2.8 V. X-ray diffraction analysis indicated that the microstructure of all the films is amorphous, which is independent of O2 flow rate. Transmittance spectra reflected that the average transmittance of the thin film is sensitive to the O2 flow rate and decreases as the O2 flow rate increases. XPS analysis revealed that the density of oxygen vacancies is reduced, and the oxygen lattices are enhanced as the O2 flow rate increases. The Hall effect measurements indicated that the carrier concentration (n) was reduced with increasing O2 flow rate. These results show that the electrical properties of Ga-IZTO TFTs can be easily tuned by the O2 flow rate during the sputtering process. The related mechanism for the variations of electrical properties of Ga-IZTO TFT has been discussed in detail.

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Electrical, electronic and optical properties of amorphous indium zinc tin oxide thin films

Denny

Lee

Seo

et al. 2014

Applied Surface Science

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Effects of gas environment on electronic and optical properties of amorphous indium zinc tin oxide thin films

Cited by 10 publications

References 33 publications

Effect of Precursor Concentration and Annealed Substrate Temperature on the Crystal Structure, Electronic and Optical Properties of ZnO thin film

Effect of Precursor Concentration and Annealed Substrate Temperature on the Crystal Structure, Electronic and Optical Properties of ZnO thin film

Influence of oxygen flow during sputtering process on the electrical properties of Ga-doped InZnSnO thin film transistor

Electrical, electronic and optical properties of amorphous indium zinc tin oxide thin films

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