Effects of gas phase absorption into Si substrates on plasma doping process

Higaki, R.; Tsutsui, Kazuo; Sasaki, Y.; Akama, S.; Mizuno, B.; Ohmi, S.

doi:10.1109/essderc.2003.1256856

Cited by 1 publication

(1 citation statement)

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“…In the surface region of as-doped substrates, dopants localize in very sallow region with high concentration and dopants may be deposited rather than implanted. It was reported that even doping from neutral gas species was significant factor where dopants possibly adsorbed on the substrate surface [2]. Such strncture should be very sensitive to following post-processes.…”

Section: Introductionmentioning

confidence: 99%

Effects of wet cleaning treatment on dose of impurity after plasma doping

Sato

Higaki

Tamura

et al.

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)

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P/asma doping is promising candidate to realize u/tra sha//ow junctions for future smal/ sca/e CMOS devices.Wet cleaning processes were investigated on sha//ow boron doped /ayers formed by p/asma doping method in this work The three kinds o f cleaning processes such as dihted HE APM and SPM were used for as-doped samp/es, and compared /oss o f boron aper therma/ anneahng between these deaning pmcesses. It was found that the diluted HF cleaning exhibited /aKe decrease of boron dose whi/e the SPM deaning exhibitedsuppression o f /om of boron dose. I? was specu/aied thaf inc/usion of bomn info chemical oxide /ayer. formed by the SPM freatment contributed to ihe suppression of loss of boron in thefoh wing annea/ingpmces.s

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Section: Introductionmentioning

confidence: 99%