Effects of Ge addition on the optical and electrical properties of eutectic Sb70Te30 films

Structural and electrical properties of Germanium-doped Sb70Te30 eutectic thin films

“…These results correlate well with direct optical measurements reported in Ref. [12] on similar samples, which have shown that the optical band gap is about 0.47 eV with no clear dependence on the Ge content. In addition, from insert in Fig.…”

“…In ref [10] it has been reported that undoped and Ge-doped Sb 70 Te 30 films (with 1.6, 5.7 and 9% of Ge) have the same Sb rhombohedral structure and according to ref. [12] the increase in Ge leads to appreciable shifts in the position of the diffraction lines, indicating changes in the lattice parameters.…”

Synthesis and Characterization of Sb<sub>65</sub>Se<sub>35-x</sub>Ge<sub>x</sub> Alloys

“…In the ternary composition, with increase in the Ge content, there is observed an upshift to a higher value in the diffraction peaks with respect to those of the Sb 2 Se crystalline phase. This indicates that the Ge is incorporated in lattice sites, perhaps substituting the Sb atoms as previously reported [36]. Also, the increase in the intensity of the main peak and the position of the peak shift can be attributed to the formation of GeSe 4 structural units with increasing Ge concentration.…”

Improvement of reliability and power consumption for SnSb4 phase change film composited with Ga3Sb7 by superlattice-like method

“…where t, s 0 , k b , and T are failure time, a pre-exponential factor depending on the material's properties, Boltzmann 15 thin films of as-deposited and annealed at 350 C for 10 min, respectively. The bright and dark strips correspond to the Ga 3 Sb 7 and SnSb 4 layers, respectively.…”