Effects of Growth and Surface Cleaning Conditions on Strain Relaxation on SiGe Films beyond a Critical Thickness on Si(001) Substrate

Park, Jeongwon; Ishii, Masato; Balasubramanian, R.; Kim, Yihwan; Kuppurao, Satheesh

doi:10.1149/1.3487582

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Decrease Of Epi Thermal Budget1

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“…Latest reports from Applied Materials show that this type of clean allows to bring bake temperature to as low as 130 o C [31] allowing growth of relaxation-free, high Ge content (40%) epitaxial SiGe films beyond the critical thickness. [32].…”

Section: Decrease Of Epi Thermal Budgetmentioning

confidence: 99%

Selective Epitaxial Growth: Trends in a Modern Transistor Device Fabrication

et al. 2011

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Although selective epitaxial growth (SEG) of Si and SiGe is a recognized technology used by the semiconductor industry, continuing device scaling and appearance of new architectures impose new, more stringent and challenging requirements to it. SiGe growth with high Ge concentrations, layers integration in 3D structures, growth on alternatively oriented Si wafers and decrease of thermal budget are only few trends which we would like to address in this article. Problematic points raising concerns from the epi point of view are highlighted and solutions used at Imec are described in detail together with once proposed in literature.

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Section: Decrease Of Epi Thermal Budgetmentioning

confidence: 99%