Effects of Growth Temperature on the Physicochemical and Photoelectrochemical Properties of a Modified Chemical Bath Deposited Fe2O3 Photoelectrode

Abstract

In this study, Fe2O3 photoelectrode thin films were grown on fluorine-doped tin oxide substrates at various temperatures ranging from 145 to 220 oC using modified chemical bath deposition. The morphological, structural, electrical, and photoelectrochemical properties of the resulting Fe2O3 photoelectrode were analyzed using field emission scanning electron microscopy, X-ray diffraction, electrochemical impedance spectroscopy, and a three-electrode potentiostat/galvanostat, respectively. Growth temperature and hydrochloric acid etching both affected the growth of the Fe2O3 photoelectrode, with Fe2O3 thin film thickness first increasing and then decreasing as growth temperature increased. The pH value of the precursor solution varied according to growth temperature, which in turn affected film thickness. The highest photocurrent density (0.53 mA/cm2 at 0.5 V vs. saturated calomel electrode) was obtained from the Fe2O3 photoelectrode grown at 190 oC, which yielded the thickest thin film, smallest full width at half maximum and largest grain size for the (104) and (110) plane, and highest flat-band potential value. Based on these findings, the photoelectrochemical properties of Fe2O3 photoelectrodes grown at various temperatures are strongly affected by their morphological, structural, and electrical properties.

Improvement of Photoelectrochemical Properties of CuO Photoelectrode by Li Doping

“…현재 CuO [3,4], Fe 2 O 3 [5][6][7], TiO 2 [8], BiVO 4 [9], WO 3 [10][11] 등의 산화물 반도체를 이용한 PEC 광전극 연구가 많이 진행되고 있다. 그 중 CuO 물질은 가시광선 흡수에 적합한 밴드갭을 가지며 광전도도가 우수하며 [12,13], 독성이 없기 때문에 환경 친화적이며 많은 양이 매장되어 있어 가격이 저렴하다는 장점을 가지고 있다 [13,14].…”