A front-panel structure with a hollow channel between sustain electrodes for an alternating current plasma display panel is proposed to achieve a low breakdown voltage and short discharge time lag due to the strong electric field in the hollow channel. When compared with a conventional structure, the structure with a hollow channel produced a 15% firing voltage improvement, 8% minimum sustaining voltage improvement at a neon gas pressure of 150 Torr, and 8% discharge time lag improvement at a sustaining voltage of 270 V.

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We fabricated a Li doped CuO photoelectrode by doping CuO with Li to improve the photoelectrochemical properties of the CuO photoelectrode. The fabricated Li doped CuO photoelectrode was optimized by experimentally investigating Li doping concentration, annealing temperature, and spin coating deposition cycle. It was confirmed that Li doped CuO had increased light absorption, decreased energy band gap, and improved crystallinity. The Li-doped CuO photoelectrode had a porous surface, unlike the bare CuO photoelectrode, and had a low charge transfer resistance as well as a high flat band potential. The Li doping concentration experiment demonstrated that the 2 at% Li doped CuO photoelectrode had a superior photocurrent density value compared with a bare CuO photoelectrode. In the annealing temperature optimization experiment with a 2 at% Li doped CuO photoelectrode, it was found to have the best photocurrent density value at 500 oC. In experiments with various spin coating deposition cycles of the Li-doped CuO photoelectrode, the light absorption, energy bandgap, crystallinity, and electrical properties were affected by changes in the film thickness of the photoelectrode. In particular, we confirmed that a sample deposited with 4 spin coating cycles had the lowest interfacial resistance between the photoelectrode and the electrolyte, and the highest flat-band potential value. Consequently, we were able to obtain an improved photocurrent density of -1.68 mA/cm2 compared to the bare CuO photoelectrode using the Li-doped CuO photoelectrode under the optimized conditions of Li 2 at%, an annealing temperature of 500 oC, and 4 cycles of spin coating depositions.

The field emission characteristics of an oxidized porous polysilicon were investigated using different oxidation process with Pt=Ti multi layer electrode. The surface oxidation layer on an oxidized porous polysilicon was formed by thermal oxidation and electrochemical oxidation. The emission efficiency of thermal oxidation which was performed in a dry O 2 with O 2 flow rate of 3 l=min at 900 C for 60 min showed 3.36% at V ps ¼ 16 V. The electrochemical oxidation was formed by solution containing 1 M sulphuric acid under 10 mA=cm 2 for 40 sec and was annealed 5 hr to improve oxide quality at 600 C. The emission efficiency of electrochemical oxidation showed 3.81% at V ps ¼ 14 V.

In this study, we deposited a WO3 thin-film photoelectrode on a fluorine-doped tin oxide (FTO) substrate using a spin-coating method, and we investigated the photocurrent density and dark current density of the WO3 photoelectrode with various amounts of H2O2 additive. The morphological, structural, optical, electrical and photoelectrochemical properties of the WO3 photoelectrode with various amounts of H2O2 additive were analyzed using FE-SEM, XRD, UV-vis spectroscopy, EIS and a three-electrode potentiostat/galvanostat system, respectively. The amount of H2O2 additive has a large influence on the thickness of the WO3 photoelectrode, XRD (100) peak intensity, light absorption, optical energy bandgap, flat-band potential, donor density value, etc., and thus has a large influence on photoelectrochemical properties. Specifically, the H2O2 additive had a large influence on the growth of the WO3 photoelectrode, and the photocurrent density and dark current density characteristics of the WO3 photoelectrode grown to a uniform and thick thickness were largely improved. As a result, the WO3 photoelectrode fabricated with 0.2 mL of added H2O2 exhibited a high photocurrent density value of 1.17 mA/cm², which was about 23 times higher than that of the WO3 photoelectrode fabricated without H2O2 additive, and had a dark current density value of a low 0.04 mA/cm², which was a reduction of about 87%.