Improvement of the field emission characteristics of an oxidized porous polysilicon using annealed Pt/Ti surface emitter electrode

Bae, Seong-Chan; Choi, Sie−Young

doi:10.1016/j.mejo.2005.02.126

Cited by 6 publications

(3 citation statements)

References 3 publications

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“…Diffusion of emitter metal due to the Joule's heat induced by the high density of driving current degrades the insulating performance and finally induces the breakdown of insulator. To prevent the breakdown and degeneration, therefore, the detail process of the OPPS field emitter [3][4][5][6][7][8][9] needs to be investigated to improve its emission life time and reliability for the application to the display device.…”

Section: Field Emission Characteristics Of An Oxidized Porous Polysilmentioning

confidence: 99%

Field Emission Characteristics of an Oxidized Porous Polysilicon Field Emitter Using Al₂O₃Layer as a Passivation

Ryu

Kim

Lee

et al. 2009

Molecular Crystals and Liquid Crystals

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Section: Field Emission Characteristics Of An Oxidized Porous Polysilmentioning

confidence: 99%

Field Emission Characteristics of an Oxidized Porous Polysilicon Field Emitter Using Al₂O₃Layer as a Passivation

Ryu

Kim

Lee

et al. 2009

Molecular Crystals and Liquid Crystals

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“…Its emission efficiency is below 2% due to a large driving current, and the sample is not reliable because of a thin metal electrode of below 10 nm. Therefore, the OPPS field emitter [5,6] needs to improve if it wants to be viable as a display device.…”

Section: Introductionmentioning

confidence: 99%

The Field Emission Characteristics of a Unit Pixel of a 7 × 7 Array Oxidized Porous Polysilicon Field Emitter

You

Kim

Jang

et al. 2007

Molecular Crystals and Liquid Crystals

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We fabricated oxidized porous polysilicon (OPPS) field emitters and investigated their field emission characteristics using a Ti=Pt multi-layer electrode of different thicknesses and OPPS emitters, which were patterned in a 7 Â 7 array. Each unit pixel of the 7 Â 7 array OPPS on the field emitter, with a structure of Pt=OPPS= n-type Si, was in operation and their field emission characteristics were investigated using a thermal oxidation process with a Ti=Pt multi-layer electrode. A non-doped polysilicon layer 1.75 mm is deposited on a heavily doped n-type silicon wafer and anodized in a solution of HF (50%):ethanol in a 1:1 ratio. The Ti=Pt multi-layer electrodes were formed with different thicknesses using a DC sputter. The achieved higher emission efficiency of the Ti=Pt electrode, with thickness of 2 nm=7 nm was 1.57% at V ps ¼ 20 V. The investigated field emission characteristics of the unit pixel also demonstrated good uniformity.

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“…A polysilicon layer with a thickness of 1.75 ㎛ was deposited on n+ doped p-type (100) silicon substrate using low-pressure chemical-vapor deposition(LPCVD) methods. We anodized in HF(49%) : ethanol = 1 : 1 solution at current density of 10mA/cm 2 for 15 seconds [2]. After anodization, OPPS field emitters were oxidized by an ECO technique.…”

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confidence: 99%

Field Emission Characteristics of an Oxidized Porous Polysilicon Field Emitter using Electrochemical Oxidation Process

Kwon,

Bae,

Han

et al. 2006

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Improvement of the field emission characteristics of an oxidized porous polysilicon using annealed Pt/Ti surface emitter electrode

Cited by 6 publications

References 3 publications

Field Emission Characteristics of an Oxidized Porous Polysilicon Field Emitter Using Al₂O₃Layer as a Passivation

Field Emission Characteristics of an Oxidized Porous Polysilicon Field Emitter Using Al₂O₃Layer as a Passivation

The Field Emission Characteristics of a Unit Pixel of a 7 × 7 Array Oxidized Porous Polysilicon Field Emitter

Field Emission Characteristics of an Oxidized Porous Polysilicon Field Emitter using Electrochemical Oxidation Process

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Improvement of the field emission characteristics of an oxidized porous polysilicon using annealed Pt/Ti surface emitter electrode

Cited by 6 publications

References 3 publications

Field Emission Characteristics of an Oxidized Porous Polysilicon Field Emitter Using Al2O3Layer as a Passivation

Field Emission Characteristics of an Oxidized Porous Polysilicon Field Emitter Using Al2O3Layer as a Passivation

The Field Emission Characteristics of a Unit Pixel of a 7 × 7 Array Oxidized Porous Polysilicon Field Emitter

Field Emission Characteristics of an Oxidized Porous Polysilicon Field Emitter using Electrochemical Oxidation Process

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Field Emission Characteristics of an Oxidized Porous Polysilicon Field Emitter Using Al₂O₃Layer as a Passivation

Field Emission Characteristics of an Oxidized Porous Polysilicon Field Emitter Using Al₂O₃Layer as a Passivation