Field Emission Characteristics of an Oxidized Porous Polysilicon Using Thermal Oxidation and Electrochemical Oxidation

Abstract

The field emission characteristics of an oxidized porous polysilicon were investigated using different oxidation process with Pt=Ti multi layer electrode. The surface oxidation layer on an oxidized porous polysilicon was formed by thermal oxidation and electrochemical oxidation. The emission efficiency of thermal oxidation which was performed in a dry O 2 with O 2 flow rate of 3 l=min at 900 C for 60 min showed 3.36% at V ps ¼ 16 V. The electrochemical oxidation was formed by solution containing 1 M sulphuric acid under 10 mA=cm 2 for 40 sec and was annealed 5 hr to improve oxide quality at 600 C. The emission efficiency of electrochemical oxidation showed 3.81% at V ps ¼ 14 V.

Field Emission Characteristics of A Minutely Patterned Oxidized Porous Polysilicon Field Emitter Using Electrochemical Oxidation Process

“…[1] The oxidized porous poly silicon(OPPS) was proposed to the most promising field emitter for FEDs owing to its simple fabrication process, and low emission voltage. [2] In the previous study, we confirmed favorable electron emission efficiency by applying the oxidization for 1 hour at 900 . However, applying the oxidation on glass substrate is impossible due to high the temperature of oxidized process.…”

Fabrication of Pierce-Type Nanocrystalline Si Electron-Emitter Array for Massively Parallel Electron Beam Lithography

“…(2)Isotropic etching of the thermally oxidized film with fluonitric acid to form a mask is performed, and a hemispherical surface is formed . (3)The oxide film is removed and a polysilicon layer is formed by low‐pressure chemical vapor deposition (LP‐CVD). Silicon nitride and silicon oxide films are also formed. (4)The silicon oxide is patterned, the silicon nitride is etched with hot phosphoric acid, and the silicon oxide is removed. (5)nc‐Si is formed by anodic oxidation and electrochemical oxidation . (6)Au traces for applying voltage to the surface electrodes are formed . (7)The substrate forming the electron emitter is fixed to the support substrate by a polyimide bonding layer and Au bumps are formed on the underside. (8)The electron sources are separated by deep reactive ion etching (deep RIE). Next, electrical isolation and structural durability are assured by filling the trenches with insulating resin.…”