Fabrication of Pierce‐Type Nanocrystalline Si Electron‐Emitter Array for Massively Parallel Electron Beam Lithography

Abstract

SUMMARYThis paper reports on the development of a fundamental process for a Pierce‐type nanocrystalline Si (nc‐Si) electron emitter array for massively parallel electron beam (EB) lithography based on active‐matrix operation using a large‐scale integrated circuit (LSI). The emitter array consists of 100 × 100 hemispherical emitters formed by isotropic wet etching of Si. EB resist patterning was demonstrated by 1:1 projection exposure using a discrete emitter array at CMOS‐compatible operating voltages. Isolation trenches filled with benzocyclobutene (BCB) were fabricated in the Si substrate for independent control of each emitter using the LSI. The integration process of the emitter array with LSI and an extraction electrode plate was also developed based on Au‐In and polymer bonding technologies.

Modeling the Temporal Response of Gated ZnO Nanowire Field Emitter by Considering the Charging and Self-Heating Effect for Improving the Response Speed

“…Field emitter array has important applications in field emission display [1][2][3][4][5], parallel electron-beam lithography [6][7][8][9], and X-ray source [10][11][12][13][14][15]. Until now, only CNT [16], Si nanotip [17], and ZnO nanowire [18] have been active in studies of field emitter array applications.…”