Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system

Obradović, Marko; Pjević, D.; Peruško, D.; Grce, Ana; Milosavljević, M.; Homewood, K. P.; Siketić, Zdravko

doi:10.1016/j.tsf.2015.03.074

Cited by 16 publications

(4 citation statements)

References 19 publications

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“…Another immiscible interface of AlN/ TiN multilayered with AlN (~8 nm) and TiN (~9.3 nm) layers of a total thickness around 260 nm could tolerant the radiation upon 30 keV He ion irradiation, up to a dose of 1 × 10 17 ions/ cm 2 . [100] The interaction behaviors of point defects and heterophase interfaces was discussed by implanting He atoms into the ZrN/TaN multilayered nanofilms. [101] It was found that point defect-interface interaction on the two sides of the ZrN/TaN interface was asymmetric as shown in Figure 6a and b, which is much probably attributed to the difference in the vacancy formation energies of ZrN and TaN.…”

Section: Nanolayered Ceramicsmentioning

confidence: 99%

“…On the contrary, single layer MgO film shows a significant hardness increase of around 20% as well as high‐density point defects. Another immiscible interface of AlN/TiN multilayered with AlN (∼8 nm) and TiN (∼9.3 nm) layers of a total thickness around 260 nm could tolerant the radiation upon 30 keV He ion irradiation, up to a dose of 1×10 17 ions/cm 2 [100] . The interaction behaviors of point defects and hetero‐phase interfaces was discussed by implanting He atoms into the ZrN/TaN multilayered nanofilms [101] .…”

Section: Hetero‐phase Interfaces In Nanomaterialsmentioning

confidence: 99%

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Recent Progress on Interfaces in Nanomaterials for Nuclear Radiation Resistance

Jiang

et al. 2022

ChemNanoMat

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Interfaces including grain boundaries and heterophase interfaces could withstand the radiation damage via providing sites for trapping the defects. With the urgent demand for high radiation-tolerance nanostructured materials, exploration of the structural properties, especially the role of the interfaces on the radiation response in the nanomaterials, is of significant essentialness in developing the design of new radiation-resistant materials. Herein, the recent progress and development of two main kinds of interfaces, namely the grain boundaries in nanocrystalline and the hetero-phase interfaces in nanolayered materials and nano-composites, in nanostructured materials that are designed for radiation tolerance are summarized. In addition, the radiation response and resistant mechanism under irradiation conditions of the nanocrystalline materials like metals, single-phase alloys, and ceramics, as well as the nanocomposites like nanolayered metals, nanolayered ceramics, metal-carbon nanocomposite, and nanoparticle dispersed steels, are reviewed. Finally, challenges and perspectives are proposed to offer advice for the development of radiation resistance nanomaterials.

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Section: Nanolayered Ceramicsmentioning

confidence: 99%

Section: Hetero‐phase Interfaces In Nanomaterialsmentioning

confidence: 99%

Recent Progress on Interfaces in Nanomaterials for Nuclear Radiation Resistance

Jiang

et al. 2022

ChemNanoMat

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“…However, whilst potentially detrimental to the mechanical integrity of the material, the effects of gas injection in AlN are largely unaddressed with only scarce studies on He implanted sintered or polycrystalline AlN [21][22][23][24], and only a few are reported for other He or H-implanted nitrides [25][26][27][28]. The radiation effects at elevated temperatures, which are of particular concern for nuclear applications, were also barely investigated and the few reports mostly deal with thermal annealing of damage induced by irradiation [16,[29][30].…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of elastic strain and damage build-up in He implanted AlN

Jublot-Leclerc

Bouhali

Pallier

et al. 2021

Journal of the European Ceramic Society

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The elastic strain build-up and damage induced by 50 keV He implantation at RT and 550°C into (0001)AlN were studied using a combination of XRD experiments, XRD simulation, and TEM experiments. Evidence for strong dynamic annealing with efficient point defect recombination is reported at RT. The point defect recombination is found to be enhanced with increasing implantation temperature where He concentration is low, indicating increased mobility of interstitial-type defects and resulting in low strain. A reversed effect is observed for He concentration exceeding 5 at.% (3 at.%) at RT (550°C) : thermally activated mechanisms related to the nucleation and growth of He-V complexes overcome the point defect recombination and promote the strain and damage build-up. At 1x10 17 cm-2 , only clusters of interstitials are observed at RT, whilst bubbles and basal stacking faults are additionally formed at 550°C for a critical He concentration estimated to be close to 4-6 at.%.

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“…For the last few years several papers, devoted to the influence of Cu -, Au -, N + ion implantation on hardness, plasticity index and corrosion resistance were published [46][47][48][49][50]. Improvement of different characteristics, such as hardness, were found in the case of relatively high doses of implantation (1-2)Á10 17 cm À2 [46,49,[51][52][53]. Overview of published studies devoted to the characteristics and properties of HEA nitride coatings shows that improvement of physicalmechanical characteristics is usually obtained in a narrow ion dose range [54,46,55].…”

Section: Introductionmentioning

confidence: 99%

Nanostructured multielement (TiHfZrNbVTa)N coatings before and after implantation of N+ ions (1018cm−2): Their structure and mechanical properties

Pogrebnjak

Бондар

Borba

et al. 2016

Nuclear Instruments and Methods in Physics Research Section B:

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a b s t r a c tMultielement high entropy alloy (HEA) nitride (TiHfZrNbVTa)N coatings were deposited by vacuum arc and their structural and mechanical stability after implantation of high doses of N + ions, 10 18 cm À2 , were investigated. The crystal structure and phase composition were characterized by X-ray diffraction (XRD) and Transmission Electron Microscopy, while depth-resolved nanoindentation tests were used to determine the evolution of hardness and elastic modulus along the implantation depth. XRD patterns show that coatings exhibit a main phase with fcc structure, which preferred orientation varies from (1 1 1) to (2 0 0), depending on the deposition conditions. First-principles calculations reveal that the presence of Nb atoms could favor the formation of solid solution with fcc structure in multielement HEA nitride. TEM results showed that amorphous and nanostructured phases were formed in the implanted coating sub-surface layer ($100 nm depth). Concentration of nitrogen reached 90 at% in the near-surface layer after implantation, and decreased at higher depth. Nanohardness of the as-deposited coatings varied from 27 to 38 GPa depending on the deposition conditions. Ion implantation led to a significant decrease of the nanohardness to 12 GPa in the implanted region, while it reaches 24 GPa at larger depths. However, the H/E ratio is P0.1 in the sub-surface layer due to N + implantation, which is expected to have beneficial effect on the wear properties.

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Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system

Cited by 16 publications

References 19 publications

Recent Progress on Interfaces in Nanomaterials for Nuclear Radiation Resistance

Recent Progress on Interfaces in Nanomaterials for Nuclear Radiation Resistance

Temperature dependence of elastic strain and damage build-up in He implanted AlN

Nanostructured multielement (TiHfZrNbVTa)N coatings before and after implantation of N+ ions (1018cm−2): Their structure and mechanical properties

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