Semiconductor laser devices are readily available and practical radiation sources
providing wavelength tenability and high monochromaticity. Low-intensity red and
near-infrared lasers are considered safe for use in clinical applications. However,
adverse effects can occur via free radical generation, and the biological effects of
these lasers from unusually high fluences or high doses have not yet been evaluated.
Here, we evaluated the survival, filamentation induction and morphology of
Escherichia coli cells deficient in repair of oxidative DNA
lesions when exposed to low-intensity red and infrared lasers at unusually high
fluences. Cultures of wild-type (AB1157), endonuclease III-deficient (JW1625-1), and
endonuclease IV-deficient (JW2146-1) E. coli, in exponential and
stationary growth phases, were exposed to red and infrared lasers (0, 250, 500, and
1000 J/cm2) to evaluate their survival rates, filamentation phenotype
induction and cell morphologies. The results showed that low-intensity red and
infrared lasers at high fluences are lethal, induce a filamentation phenotype, and
alter the morphology of the E. coli cells. Low-intensity red and
infrared lasers have potential to induce adverse effects on cells, whether used at
unusually high fluences, or at high doses. Hence, there is a need to reinforce the
importance of accurate dosimetry in therapeutic protocols.