Effects of high-energy proton implantation on the luminescence properties of InAs submonolayer quantum dots

Upadhyay, S.; Mandal, Ajay; Subrahmanyam, N.B.V.; Singh, P.; Shete, Pranav; Tongbram, Binita; Chakrabarti, Subhananda

doi:10.1016/j.jlumin.2015.11.007

Cited by 8 publications

(3 citation statements)

References 27 publications

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“…Because of the presence of a lower potential PR4AA trap center, photocarriers from the GaAs conduction band can relax to PR4AA and participate in direct tunneling from PR4AA to QD layers. 22) Therefore, PR4AA at a fluence of 7 × 10 11 protons=cm 2 assists carrier capture to QDs in addition to the phonon bottleneck effect reduction due to point defects. On the other hand, it has been reported that a higher fluence introduces protonirradiated point defects or their complexes with other defects such as arsenic antisite, As Ga -V As , and threading and misfit dislocations.…”

Section: Conduction Band Excitation 311 Comparison Of Photoluminescen...mentioning

confidence: 99%

“…On the other hand, it has been reported that a higher fluence introduces protonirradiated point defects or their complexes with other defects such as arsenic antisite, As Ga -V As , and threading and misfit dislocations. 8,10,[22][23][24] The fluence of 4 × 10 12 protons=cm 2 (sample C) increases the PR4AA trap density up to 4 × 10 14 cm −3 as well as creates another deep defect level, PR1 (E a = 0.81 eV, N T = 2 × 10 14 cm −3 ). 7) We consider that these proton-induced point defects and PR1 level suppress PL for QDs and quench the PL intensity.…”

Section: Conduction Band Excitation 311 Comparison Of Photoluminescen...mentioning

confidence: 99%

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Characterization of nonradiative recombination centers in proton-irradiated InAs/GaAs quantum dots by two-wavelength-excited photoluminescence

Haque

Kamata

Sato

et al. 2018

Jpn. J. Appl. Phys.

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Nonradiative recombination (NRR) centers in as-grown and proton-irradiated InAs/GaAs quantum dot (QD) structures have been studied by two-wavelength-excited photoluminescence (PL). The PL intensity quenching of GaAs and QD emissions due to the addition of a below-gap excitation light of 0.80 eV energy indicates the presence of defect levels acting as NRR centers. The method enables us to discuss the distribution of NRR centers in GaAs and/or InAs QD regions by selecting either conduction band excitation (2.33 eV) or intermediate band excitation (1.27 eV). We have found that the densities of NRR centers in GaAs layers and the effect of quenching on GaAs emissions increase monotonically with increasing proton irradiation fluence. The QD emission intensity, however, increases at a moderate fluence of 7 × 1011 protons/cm2 owing to the defect-assisted trapping of electrons into QDs. Further incorporation of NRR centers after 4 × 1012 protons/cm2 fluence quenches the QD-PL intensity below that of an unirradiated sample.

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Section: Conduction Band Excitation 311 Comparison Of Photoluminescen...mentioning

confidence: 99%

Section: Conduction Band Excitation 311 Comparison Of Photoluminescen...mentioning

confidence: 99%

Characterization of nonradiative recombination centers in proton-irradiated InAs/GaAs quantum dots by two-wavelength-excited photoluminescence

Haque

Kamata

Sato

et al. 2018

Jpn. J. Appl. Phys.

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“…Some studies have shown a decrease in photoluminescence (PL) intensity and optical power after irradiation, [11][12][13][14] while others have reported an increase in PL intensity of InAs/GaAs QDs irradiated with a specific energy or fluence. 15,16 There is even a controversy over whether radiation introduces defects in QDs. O'Driscoll et al found that QDs maintained their integrity after irradiation, and defects within a QD usually clustered into one.…”

Section: Introductionmentioning

confidence: 99%

Efficient quantum state transmission via perfect quantum network coding

Chen

et al. 2018

Sci. China Inf. Sci.

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Quantum network coding with the assistance of auxiliary resources can achieve perfect transmission of the quantum state. This paper suggests a novel perfect network coding scheme to efficiently solve the quantum k-pair problem, in which only a few assisting resources are introduced. Specifically, only one pair of maximally entangled state needs to be pre-shared between two intermediate nodes, and only O(k) of classical information is transmitted though the network. Moreover, the classical communication used in our protocol does not cause transmission congestion, providing better adaptability to large-scale quantum k-pair networks. Through relevant analyses and comparisons, we demonstrate that our proposed scheme saves resources and has good application value, thereby showing its high efficiency. Furthermore, the proposed scheme achieves 1-max flow quantum communication, and the achievable rate region result is extended from its counterpart over the butterfly network.

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Realization of high-quality InGaAs/GaAs quantum dot growth on Ge substrate and improvement of optical property through ex-situ ion implantation

Kumar

Panda

Das

et al. 2020

Journal of Luminescence

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Effects of high-energy proton implantation on the luminescence properties of InAs submonolayer quantum dots

Cited by 8 publications

References 27 publications

Characterization of nonradiative recombination centers in proton-irradiated InAs/GaAs quantum dots by two-wavelength-excited photoluminescence

Characterization of nonradiative recombination centers in proton-irradiated InAs/GaAs quantum dots by two-wavelength-excited photoluminescence

Efficient quantum state transmission via perfect quantum network coding

Realization of high-quality InGaAs/GaAs quantum dot growth on Ge substrate and improvement of optical property through ex-situ ion implantation

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