Effects of High-Field Velocity Saturation on the Performance of V-Doped 6H Silicon-Carbide Photoconductive Switches

Wang, Langning; Chu, Xu; Wu, Qilin; Xun, Tao; Yang, Hanwu; He, Juntao; Zhang, Jun

doi:10.1109/jestpe.2020.3038561

Cited by 19 publications

(6 citation statements)

References 25 publications

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“…A packaging method for SiC devices is proposed, forming an overall packaging design and processing technology scheme. The problem of achieving the stable operation of a single device with 20 kV high power capacity has been solved through continuous research and optimization of the structure, the processing technology, and the device fabrication of vertical PCSDs [55] . Figure 6 shows the typical structure of a vertical PCSD.…”

Section: Progress In Device Fabrication and Processingmentioning

confidence: 99%

Recent progress of parameter-adjustable high-power photonic microwave generation based on wide-bandgap photoconductive semiconductors

Xun,

Niu,

Wang

et al. 2024

中国光学快报

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Radio frequency/microwave-directed energy sources using wide bandgap SiC photoconductive semiconductors have attracted much attention due to their unique advantages of high-power output and multi-parameter adjustable ability. Over the past several years, benefitting from the sustainable innovations in laser technology and the significant progress in materials technology, megawatt-class output power electrical pulses with a flexible frequency in the P and L microwave wavebands have been achieved by photoconductive semiconductor devices. Here, we mainly summarize and review the recent progress of the high-power photonic microwave generation based on the SiC photoconductive semiconductor devices in the linear modulation mode, including the mechanism, system architecture, critical technology, and experimental demonstration of the proposed high-power photonic microwave sources. The outlooks and challenges for the future of multi-channel power synthesis development of higher power photonic microwave using wide bandgap photoconductors are also discussed.

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Section: Progress In Device Fabrication and Processingmentioning

confidence: 99%

Recent progress of parameter-adjustable high-power photonic microwave generation based on wide-bandgap photoconductive semiconductors

Xun,

Niu,

Wang

et al. 2024

中国光学快报

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“…Extrinsic absorption occurs when the photon energy is smaller than the bandgap. Vertical PCSS with electrodes on opposite side of the substrate are widely illuminated by an extrinsic laser such as waveleng of 532 nm (double frequency of Nd:YAG 1064 nm wavelength) [16], [17]. The breakdown voltage of vertical PCSS is high for the thick substrate ~mm dimension level, and the current density can be controlled with a large current cross section since the electrode of vertical power PCSS is about mm-cm dimension.…”

Section: Introductionmentioning

confidence: 99%

“…So, it can make full use of high breakdown field properties of bulk materials and assure the bulky current flow [18]. V-doped SiC PCSS can achieve extrinsic absorption through impurity absorption [9], and researchers have paid attention on vertical SiC PCSS with extrinsic 532-nm-wavelength laser in terms of high output power, high photoelectric conversion efficiency, and so on [16], [17], [18]. Sullivan has reported that the power capacity of a single thickness of 1 mm and side width of 1 cm square SiC wafer is 22.4 MW (16 kV bias voltage and 1.4 kA peak current) with a 5 MW peak optical power input [9].…”

Section: Introductionmentioning

confidence: 99%

Characteristics Comparison of SiC and GaN Extrinsic Vertical Photoconductive Switches

Zeng,

Wang,

Niu

et al. 2024

IEEE J. Electron Devices Soc.

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Vertical extrinsic photoconductive semiconductor switches (PCSSs) are presented with initial characteristics comparison between V-doped 4H-SiC and Fe-doped GaN PCSS under axial triggering such as dark resistance, photoconductivity, power output, and breakdown behavior. Experiments are carried out under the 532-nm-wavelength laser with mJ-level energy and a pulse width of 30 ns. Photoconductive experiments show that the photoelectric conversion efficiency of GaN PCSS is 2.27 times higher than 4H-SiC PCSS with the same electric field strength under different laser energies from 1 mJ to 5 mJ. 4H-SiC PCSS with a dark-state resistance of 10 12 Ω • cm can withstand a bias voltage of 8 kV (16 kV/mm) and laser energy of 8 mJ and the maximum output power is up to 428.7 kW, while that of GaN can only stand a bias voltage of 1 kV (2.9 kV/mm) because of low dark resistance and defect. Obvious cracks of 4H-SiC PCSS can be observed from the breakdown image after breakdown occurs, while the dark-state resistance of GaN PCSS drops from 10 6 Ω•cm to 10 4 Ω•cm under high DC voltage.

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“…The laser light can be introduced to the vPCSS by surface normal illumination or side illumination. A transparent conductive window is introduced on one of the electrodes in the vPCSS for the surface normal illumination [28]- [30]. Because the devices were illuminated by the 532-nm laser light, they suffer from low optical absorption efficiency.…”

Section: Introductionmentioning

confidence: 99%

Side-Illuminated Photoconductive Semiconductor Switch Based on High Purity Semi-Insulating 4H-SiC

Choi

Kim

et al. 2021

IEEE Trans. Electron Devices

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High purity semi-insulating (HPSI) 4H-silicon carbide (SiC) was used to fabricate lateral and vertical photoconductive semiconductor switches (PCSSs). The lateral PCSSs were illuminated from the frontside (fPCSS) or the backside (bPCSS). The side-illuminated vertical PCSS (vPCSS) was designed to increase the light-matter interaction volume. A 532-nm pulsed laser with adjustable energy was utilized to excite the PCSSs. The turn-on time was found to be highly dependent on the optical illumination energy, and the full-width at half-maximum of the PCSSs output waveforms was related to the peak output voltage. The output electrical pulse from the vPCSS exhibited a shorter turn-on time and a larger pulsewidth than the two types of lateral PCSSs. The vPCSS outperformed the fPCSS and bPCSS in terms of minimum ON-state resistance and output pulse amplitude under the same optical illumination energy. The vPCSS, which utilizes a large effective contact area to collect photogenerated carriers, also had higher photon absorption efficiency by arranging the optical path at a right angle to the carrier transport. The vPCSS exhibited a minimum ON-state resistance of 0.34 at optical illumination energy of 8 mJ.

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Effects of High-Field Velocity Saturation on the Performance of V-Doped 6H Silicon-Carbide Photoconductive Switches

Cited by 19 publications

References 25 publications

Recent progress of parameter-adjustable high-power photonic microwave generation based on wide-bandgap photoconductive semiconductors

Recent progress of parameter-adjustable high-power photonic microwave generation based on wide-bandgap photoconductive semiconductors

Characteristics Comparison of SiC and GaN Extrinsic Vertical Photoconductive Switches

Side-Illuminated Photoconductive Semiconductor Switch Based on High Purity Semi-Insulating 4H-SiC

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