Effects of high-k zirconium oxide (ZrO2) interlayer on the electrical and transport properties of Au/n-type InP Schottky diode

Balaram, N.; Reddy, M. Siva Pratap; Reddy, V. Rajagopal; Park, Chinho

doi:10.1016/j.tsf.2016.10.060

Cited by 30 publications

(6 citation statements)

References 30 publications

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“…x = 0.4 concentration revealed a high detectivity of D* = 0.5059 10 12 Jones, which is comparatively higher than by Su and Ouyang et al [64][65][66][67][68][69][70][71][72][73][74][75] The obtained higher detectivity suggests a low noise level of the fabricated MOS diodes. The fabricated MOS diode with superior detectivity (i.e.…”

Section: Qe ¼ (7) Qlmentioning

confidence: 58%

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Inherent characteristics of ultra-photosensitive Al/Cu–CeO₂/p-Si metal oxide semiconductor diodes

Manikandan¹,

Marnadu

Chandrasekaran

et al. 2022

J. Mater. Chem. C

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Section: Qe ¼ (7) Qlmentioning

confidence: 58%

“…The specific detectivity (D*) is a key parameter to analyse the photodetector performance, which can be defined as the inverse of the noise-equivalent power. The following equation was used to calculate the D* of the MOS diodes, 64 of %) was calculated using the obtained responsivity (R) by the following equation, 62…”

Section: R I Ph (6) Pamentioning

confidence: 99%

Inherent characteristics of ultra-photosensitive Al/Cu–CeO₂/p-Si metal oxide semiconductor diodes

Manikandan¹,

Marnadu

Chandrasekaran

et al. 2022

J. Mater. Chem. C

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“…ZrO 2 has high refractive index, high melting point of 2680°C, wide region of low absorption from the near-UV > 240 nm to mid-IR range < 8 mm and high resistance against oxidation [110,111]. This material is also characterized by high breakdown field, good thermal stability, large band gap >5ev, and high-dielectric constant >20 [112][113][114][115], thus, the material has been considered a potential challenger of other nanoparticles. In a recent report, it was established that ZrO 2 exhibits superior chemical and thermal stability than alumina and silica nanoparticles [112].…”

Section: Nanoparticle Characterizationmentioning

confidence: 99%

Nanofluids as Novel Alternative Smart Fluids for Reservoir Wettability Alteration

Nwidee¹,

Barifcani²,

MohammadSarmadivaleh³

et al. 2018

Novel Nanomaterials - Synthesis and Applications

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This chapter presents an account of two metal oxide nanoparticles (zirconium and nickel oxide) on basis of their structure, morphology, crystallinity phases, and their wetting effect on solid-liquid interface. As a preliminary step to sound understanding of process mechanisms; wettability, nanoparticles, and their relations thereof were scrutinized. To investigate the nanofluids wetting inclinations, complex mixtures of the nanoparticles and NaCl brine (ZrO 2 /NaCl; NiO/NaCl) were formulated and their technical feasibility as wetting agents tested via contact angle measurement. The result shows that the nanoparticles exhibit different structural and morphological features and capable of addressing reservoir wettability challenges owing to favorable adsorption behavior on the surface of the calcite which facilitated the wetting changes quantified by contact angle. We believe this study will significantly impact the understanding of wetting at solid-liquid interface which is crucial for recovery process optimization.

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“…In this work, the influence of hydrogen effect on the electrical properties of 1200 V 4H-SiC SBDs is investigated by TCAD device simulation and experiments. The electrical properties of SBDs with junction barrier structure before and after hydrogen treatment were systematically investigated, and the density of interface states at the metal-SiC interface was analyzed based on the high-low frequency capacitance method [25,26] from the C-V measurement. The effects of the doping profile in p-type region and n-drift layer on the electrical characteristics of SBDs is analyzed in detail.…”

Section: Introductionmentioning

confidence: 99%

Effect of hydrogen treatment on 4H-SiC Schottky barrier diodes

Chen,

Liu,

Sun

et al. 2024

Phys. Scr.

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In this letter, 4H-SiC Schottky barrier diodes (SBDs) with Ti Schottky metal have been subjected to hydrogen treatment in a confined environment of 4 % H2 and 96 % N2 at 150 °C. The effect of hydrogen treatment on the SBDs electrical characteristics has been investigated by technical computer-aided design simulation (TCAD) and power device analyzer curve tracer. The change of electrical parameters of SBDs measured after hydrogen treatment is studied in detail, and the related degradation mechanism is discussed. It was found that hydrogen treatment affected both the interface region and bulk region of SiC SBDs. After hydrogen treatment, the Schottky barrier increases slightly, the ideal factor (n) decreases slightly, and the interfacial state density (Dit) decreases. Hydrogen treatment resulted in a slight reduction in specific on-resistance (Ron-sp), which was attributed to the diffusion of H in SBDs. Through TCAD simulation, it is determined that the diffusion of H in the body diode of SBDs is the main reason for the degradation of high forward current and high reverse voltage characteristics.

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Effects of high-k zirconium oxide (ZrO2) interlayer on the electrical and transport properties of Au/n-type InP Schottky diode

Cited by 30 publications

References 30 publications

Inherent characteristics of ultra-photosensitive Al/Cu–CeO₂/p-Si metal oxide semiconductor diodes

Inherent characteristics of ultra-photosensitive Al/Cu–CeO₂/p-Si metal oxide semiconductor diodes

Nanofluids as Novel Alternative Smart Fluids for Reservoir Wettability Alteration

Effect of hydrogen treatment on 4H-SiC Schottky barrier diodes

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Effects of high-k zirconium oxide (ZrO2) interlayer on the electrical and transport properties of Au/n-type InP Schottky diode

Cited by 30 publications

References 30 publications

Inherent characteristics of ultra-photosensitive Al/Cu–CeO2/p-Si metal oxide semiconductor diodes

Inherent characteristics of ultra-photosensitive Al/Cu–CeO2/p-Si metal oxide semiconductor diodes

Nanofluids as Novel Alternative Smart Fluids for Reservoir Wettability Alteration

Effect of hydrogen treatment on 4H-SiC Schottky barrier diodes

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Product

Resources

About

Inherent characteristics of ultra-photosensitive Al/Cu–CeO₂/p-Si metal oxide semiconductor diodes

Inherent characteristics of ultra-photosensitive Al/Cu–CeO₂/p-Si metal oxide semiconductor diodes