2022
DOI: 10.1016/j.optmat.2022.112868
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Effects of hot isostatic pressing on the performance of CVD ZnSe

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Cited by 3 publications
(3 citation statements)
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“…By improving the crystal process, upgrading the equipment, and continuously optimizing the growth parameters, we obtained a high-transmittance, lowabsorption-coefficient ZnSe material with a diameter of 100 mm and thickness of 10 mm which is larger than the previously reported ZnSe single crystal and polycrystalline materials. 11,[17][18][19] Different samples were analyzed using an X-ray diffractometer (40 kV, Cu, 5°min −1 , step 0.02°) for the XRD patterns. The surface morphology of the ZnSe samples grown by the CVD method was observed using a universal optical microscope.…”
Section: Methodsmentioning
confidence: 99%
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“…By improving the crystal process, upgrading the equipment, and continuously optimizing the growth parameters, we obtained a high-transmittance, lowabsorption-coefficient ZnSe material with a diameter of 100 mm and thickness of 10 mm which is larger than the previously reported ZnSe single crystal and polycrystalline materials. 11,[17][18][19] Different samples were analyzed using an X-ray diffractometer (40 kV, Cu, 5°min −1 , step 0.02°) for the XRD patterns. The surface morphology of the ZnSe samples grown by the CVD method was observed using a universal optical microscope.…”
Section: Methodsmentioning
confidence: 99%
“…By improving the crystal process, upgrading the equipment, and continuously optimizing the growth parameters, we obtained a high-transmittance, low-absorption-coefficient ZnSe material with a diameter of 100 mm and thickness of 10 mm which is larger than the previously reported ZnSe single crystal and polycrystalline materials. 11,17–19…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation