Effects of hydrogen during molecular beam epitaxy of GaN

Yang, Dong; Feenstra, R. M.

doi:10.1002/pssc.200461464

Cited by 3 publications

(4 citation statements)

References 11 publications

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“…The Ga-flux for this transition increases as the abundance of hydrogen increases, e.g. the transition Ga-flux increases by 50% when partial pressure of hydrogen increases from 2×10 -9 to 2×10 -6 Torr at a substrate temperature of 700°C [11]. This result is consistent with observations of VanMil et al, who suggest that atomic nitrogen atoms are a relatively inefficient species for the growth of GaN [6].…”

supporting

confidence: 89%

“…It should be emphasized that under Ga-rich conditions (streaky RHEED pattern), even with the presence of hydrogen, the surface termination of the (0001) surface is still "1×1", as determined by RHEED, Auger electron spectroscopy, and low energy electron diffraction. Only when the partial pressure of hydrogen reaches 2×10 -6 Torr, with the substrate temperature lowered to 660°C and under Ga-lean conditions do we observe a different RHEED pattern, namely a sharp 2×2 [11]. The conditions in this case are similar to those predicted in Ref.…”

supporting

confidence: 87%

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Effects of hydrogen on the morphology and electrical properties of GaN grown by plasma-assisted molecular-beam epitaxy

Yang

Feenstra

Greve

et al. 2005

Applied Physics Letters

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We study the effect of introducing hydrogen gas through the RF-plasma source during plasma-assisted molecular-beam epitaxy of GaN(0001). The well-known smooth-torough transition that occurs for this surface as a function of decreasing Ga flux in the absence of H is found to persist even with H present, although the critical Ga flux for this transition increases. Under Ga-rich conditions, the presence of hydrogen is found to induce step bunching (facetting) on the surface. Conductive atomic force microscopy reveals that leakage current through dislocation cores is significantly reduced when hydrogen is present during the growth.Published in Appl. Phys. Lett. 86, 121914 (2005).

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supporting

confidence: 89%

supporting

confidence: 87%

Effects of hydrogen on the morphology and electrical properties of GaN grown by plasma-assisted molecular-beam epitaxy

Yang

Feenstra

Greve

et al. 2005

Applied Physics Letters

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“…A possible interpretation for this behavior is that the H atoms somehow affect the gas-phase kinetics so as to produce additional active N species. 33,35 At higher values of µ H a 2×2 structure forms on the surface, which is interpreted as arising from a surface termination by H and NH 2 Fig. 2.…”

Section: Hydrogen On Gan(0001)mentioning

confidence: 98%

“…Figure 2 shows a phase diagram derived from RHEED observations during PA-MBE growth in which some H has been added to the N 2 flowing through the plasma source. 33 The inset of Fig. 2 shows optical spectra of the plasma with and without the H present.…”

Section: Hydrogen On Gan(0001)mentioning

confidence: 99%

Recent developments in surface studies of GaN and AlN

Feenstra¹,

Yang²,

Lee³

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Recent developments in the structural analysis of GaN and AlN surfaces are reviewed, and the implications of these structures for molecular beam epitaxial growth are discussed. The GaN(0001), AlN(0001), and GaN ) 0 1 10 ( surfaces are all found to be terminated by metallic layers containing approximately one bilayer of Ga or Al atoms. However, in contrast to GaN(0001) where the Ga-bilayer exists in an incommensurate, fluid-like state at room temperature, the metallic layers for AlN(0001) and GaN ) 0 1 10 ( form large-unit-cell commensurate structures with static atomic arrangements. Small amounts of H on the GaN(0001) surface leads to facet formation on the surface, whereas larger amounts of H produce a new 2×2 surface arrangement that displaces the Gabilayer. A possible model for the H-terminated GaN ) 1 1 10 ( surface is introduced and first-principles total energy calculations employing a finite temperature thermodynamics approach are employed to determine the conditions in which it could be stable.

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