Effects of illumination and 60Co γ-ray irradiation on the electrical characteristics of porous silicon solar cells

The interface states and series resistance effects on the forward and reverse bias I–V, C–V and G/ω-V characteristics of Al–TiW–Pd2Si/n-Si Schottky barrier diodes

“…As shown in Table 1, the obtained R s values by different methods are almost in agreement with each other and decrease with the increasing illumination intensity. Similar results have been reported in the literature [18][19][20][24][25][26]. The results are consistent with a net reduction in carrier density in the depletion region of device through the introduction of traps and recombination centers associated with illumination effect [27].…”

“…Furthermore in n-type semiconductors, the energy of interface states N ss with respect to the bottom of conduction band E c at the surface of the semiconductor can be obtained according to refs. [22,24]. The W D was also calculated C-V characteristic for each illumination intensity at 50 kHz using the equation for the width of the space charge region (W D = [2ε s ε 0 V d /qN D ] 1/2 ).…”

<i>γ</i>-Ray Irradiation Effect on MCF Rubber Solar Cells with both Photovoltaics and Sensing Involving Semiconductors Fabricated under Magnetic and Electric Fields

“…, where V f is the forward-bias voltage and V i is the voltage drop at the thin isolated layer. Recognizing the consequences clarified in other studies on solar cells with γ-irradiation [10] [27], we investigated changes in N that also arise as a result of the enhancement of current leakage between A − and D + in MCF rubber as follows. The method as presented in the study [10] is effective to evaluate N from the relation between electric current and voltage obtained by cyclic voltammetry as shown in Figure 13.…”

“…Semiconductors are basic not only to solar cells but also to photodetectors, metal [10], MIS solar cells [11], photodetectors [12], MS Schottky diodes [13], MIS Schottky diodes [14], MOS capacitors [15] [16], and MOS diodes [17].…”

The effect of gamma irradiation on electrical characteristics of Au/polyvinyl alcohol (Co, Zn‐doped)/n‐Si Schottky barrier diodes

“…60 Co (γ‐rays) has become one of the most common processes producing modifications in electrical, chemical, and morphological properties of SBDs 10, 16, 17. The electrical characteristics of these devices especially depend on the formation of an interfacial insulator/polymer layer, barrier height (BH), interface properties at metal/semiconductor (M/S) interface, series resistance of device ( R s ), and surface states at polymer/semiconductor interface 18–22…”