Effects of in-situ thermal annealing on defects associated with GaAs/Ge interface in GaAs/Ge/Si heterostructure

Kim, D.K.; Lee, B.-T.; Woo, Y. D.; Kang, Tae Won; Paek, Mun Cheol

doi:10.1016/0167-577x(93)90177-y

Cited by 1 publication

(1 citation statement)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To avoid the problem arising from material dissimilarity between Si and III-V, the basic solution to insert other materials of which the lattice constant and CTE are matched with Si has been developed. For GaAs/Si heteroepitaxy, a wide variety of methods using germanium (Ge) [150][151][152][153][154], GaAsP [155,156], and InGaP [157] were developed. Among these materials, Ge has been most widely used because of its complete miscibility with Si, well-developed Ge-on-Si growth technology, and nearly the same lattice constant and CTE matching between GaAs and Ge [158].…”

Section: Intermediate Buffer Layermentioning

confidence: 99%

Heteroepitaxial Growth of III-V Semiconductors on Silicon

et al. 2020

View full text Add to dashboard Cite

Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs), since it provides enormous potential benefits, including versatile functionality, low-cost, large-area production, and dense integration. However, the material dissimilarity between III-V and Si, such as lattice constant, coefficient of thermal expansion, and polarity, introduces a high density of various defects during the growth of III-V on Si. In order to tackle these issues, a variety of growth techniques have been developed so far, leading to the demonstration of high-quality III-V materials and optoelectronic devices monolithically grown on various Si-based platform. In this paper, the recent advances in the heteroepitaxial growth of III-V on Si substrates, particularly GaAs and InP, are discussed. After introducing the fundamental and technical challenges for III-V-on-Si heteroepitaxy, we discuss recent approaches for resolving growth issues and future direction towards monolithic integration of III-V on Si platform.

show abstract