Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface

Tuttle, G.; Kroemer, H.; English, J. H.

doi:10.1063/1.345426

Cited by 281 publications

(105 citation statements)

References 11 publications

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“…As incorporation in the barriers during MBE growth 16,27 , and numerous intrinsic and extrinsic defects may form in the barriers. Electrically active intrinsic defects with the lowest reported formation energies 28 include interstitial aluminum, Al i,Al +1 , antimony anti-sites, Sb Al +1 , and aluminum vacancies V Al -3 .…”

Section: Manuscriptmentioning

confidence: 99%

“…The set of structures comprised variations in the InAs layer thickness, the shutter sequence used to transition the growth between the barriers and quantum well, and the composition of the Al 1-x Ga x Sb barriers. Growth of samples A, B and C made use of a shutter sequence, denoted Procedure I, developed by Tuttle and co-workers 16 . Growth of samples D and E implemented a shutter sequence, denoted Procedure II, wherein group V and III shutters were closed and opened simultaneously when the growth transitioned between barriers and the InAs layer.…”

Section: Manuscriptmentioning

confidence: 99%

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Limits to mobility in InAs quantum wells with nearly lattice-matched barriers

et al. 2016

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The growth and the density dependence of the low temperature mobility of a series of twodimensional electron systems confined to un-intentionally doped, low extended defect density InAs quantum wells with Al 1-x Ga x Sb barriers are reported. The electron mobility limiting scattering mechanisms were determined by utilizing dual-gated devices to study the dependence of mobility on carrier density and electric field independently. Analysis of the possible scattering mechanisms indicate the mobility was limited primarily by rough interfaces in narrow quantum wells and a combination of alloy disorder and interface roughness in wide wells at high carrier density within the first occupied electronic sub-band. At low carrier density the functional dependence of the mobility on carrier density provided evidence of coulombic scattering from charged defects. A gate-tuned electron mobility exceeding 750,000 cm 2 /Vs was achieved at a at a sample temperature of 2 K. The possible scattering mechanisms leading to the observed density dependence of the mobility are discussed.Heterostructures were grown by molecular beam epitaxy (MBE) on GaSb:Te (001) substrates. Growth rate and composition calibrations were performed prior to the growth of the heterostructures and verified by reflection high energy electron diffraction patterns and oscillations during the growth of the heterostructures. In a previous work it was reported the carrier mobility and single-particle lifetime in InAs/(Al,Ga)Sb heterostructures are sensitive to the dislocation density in the epitaxial layers 18 .In this work the use of the nearly lattice matched substrate and buffer layers was intended to inhibit the formation of extended defects during MBE growth. Fig. 3(a) shows the 002 x-ray diffraction curve which was measured to obtain higher contrast between the multilayers that differed by the substitution on one of the zincblende structure sites. Fig. 3(b) shows the thin film x-ray diffraction reciprocal space map in the vicinity of the 002 and asymmetric 115 Bragg reflections of the GaSb substrate of sample D. In the 115 reciprocal space map, measured in a grazing incidence configuration, the substrate peak and the peak from the AlAs 1-y Sb y buffer layer are well resolved and indicate the buffer was nearly lattice matched but slightly tensile strained 5 to the substrate (y ~ 0.9). The threading dislocation densities of the films were measured by both etch pits using a solution of HF:H 2 O 2 :H 2 SO 4 :H 2 O similar to that reported by Aifer and Maximenko 19 and by electron channeling contrast imaging (ECCI) using a backscattering geometry in a field emission scanning electron microscope. ECCI analysis was performed using several diffraction vectors to mitigate unintentionally satisfying the invisibility criterion where the Burger's vector for a given dislocation is perpendicular to the diffraction vector. Fig. 3(b) shows an ECCI micrograph measured from the surface of the MBE grown film of sample D.Several lines of enhanced contrast are interpreted ...

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Section: Manuscriptmentioning

confidence: 99%

Section: Manuscriptmentioning

confidence: 99%

Limits to mobility in InAs quantum wells with nearly lattice-matched barriers

et al. 2016

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“…[1][2][3][4][5][6][7][8][9][10][11][12] The large conduction-band offset between InAs and AlSb also results in the formation of a high barrier at the interface between these materials, and so allows for strong confinement of electrons in such QWs. With its much larger g-factor ͑Ϫ15͒ than either Si or GaAs, high-mobility InAs is furthermore of interest in the emerging area of spintronics, where the objective is to develop device structures that exploit the spin degree of freedom of the charge carriers to realize novel functionality.…”

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confidence: 99%

“…The shutter sequences employed at the start and the finish of the InAs QW enabled the formation of InSb-like bonds at both interfaces of the InAs layer. 1 The substrate-heater temperature was decreased by 20°C during the InAs QW growth, in order to achieve a constant substrate temperature ͑480°C͒. The growth rates were 6 nm/min for the InAs and 12 nm/min for the Sbcontaining layers.…”

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confidence: 99%

Large g-factor enhancement in high-mobility InAs/AlSb quantum wells

Sadofyev

Ramamoorthy

Naser

et al. 2002

Applied Physics Letters

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“…A typical example is the challenge of growing arsenide-onantimonide interfaces. Under certain molecular beam epitaxy (MBE) conditions, an arsenide-onantimonide interface can extend well over 10 monolayers [1][2][3], leading to lower carrier mobility and concentration, as well as smaller band-offsets [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic analysis of anion exchange during heteroepitaxy

Wang

Brown

et al. 2002

Journal of Crystal Growth

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A thermodynamic approach is presented to assess the extent of anion exchange reactions during the heteroepitaxy (molecular beam epitaxy) of dissimilar anion III-V compound semiconductor structures. It is shown that the extent of anion exchange can be predicted by the change in the Gibbs free energy. Bond strength changes can only be used as a guide in comparing the relative tendency for exchange, rather than as a criterion. The driving force for anion exchange strongly depends on the conditions during interface formation. A number of important factors, including bond strength, misfit strain energy, surface structure and energy, the equilibrium between dimers V 2 and tetramers V 4 , and segregation are discussed in terms of their contributions to the thermodynamics. r

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Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface

Cited by 281 publications

References 11 publications

Limits to mobility in InAs quantum wells with nearly lattice-matched barriers

Limits to mobility in InAs quantum wells with nearly lattice-matched barriers

Large g-factor enhancement in high-mobility InAs/AlSb quantum wells

Thermodynamic analysis of anion exchange during heteroepitaxy

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